Allicdata Part #: | NTD4809NAT4G-ND |
Manufacturer Part#: |
NTD4809NAT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9A DPAK |
More Detail: | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (... |
DataSheet: | NTD4809NAT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1456pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTD4809NAT4G FET, or field-effect transistor, is a type of semiconductor device that uses an electric field to control the flow of current from the gate to the source of the device. The NTD4809NAT4G FET can be used for a variety of applications, including switching, voltage regulation, and amplification. This article will discuss the application fields and working principle of the NTD4809NAT4G FET.
The main application of the NTD4809NAT4G FET is in analog and digital logic circuits. It is used as a switch or as a device to amplify small signals. It can also be used in power electronics applications to control the flow of high-voltage current. The NTD4809NAT4G FET is particularly useful in switching applications where fast switching times and low power dissipation are required. It is also well suited for low-noise applications, such as audio amplifiers.
The NTD4809NAT4G FET is a metal-oxide semiconductor field-effect transistor, or MOSFET. It is a type of unipolar transistor, which means that it only has one voltage-controlled terminal. The gate is used to control the current flow between the source and drain. When the gate voltage is low, the channel is "OFF" and no current flows. When the gate voltage is high, it turns the channel "ON" and allows current to flow between the source and drain.
The NTD4809NAT4G FET is designed for switching and voltage regulation applications. It can be used to switch high voltages, up to 150V. It has a low on-resistance, meaning that it can switch high currents with minimum power losses. The NTD4809NAT4G FET also has a high transition frequency, meaning that it can switch rapidly and is suitable for high-speed digital logic circuits. In addition, it has a low gate-drain capacitance, meaning that it has low noise characteristics.
The NTD4809NAT4G FET has a number of features that make it an ideal choice for power supply, audio amplifier, and switching applications. It has a high input impedance, meaning that it is able to switch large currents with minimum losses. It has a low output voltage when it is off, meaning that it does not cause unnecessary current leakage. It also has low gate input capacitance, meaning that its turn-on and turn-off times are fast.
In summary, the NTD4809NAT4G FET is an ideal choice for switching, audio amplifier, and power supply applications. It has a low on-resistance, high transition frequency, and low gate-drain capacitance. It can also switch high voltages up to 150V and is suitable for high-speed digital logic circuits. Its low gate input capacitance makes it an ideal choice for high-speed applications and its low output voltage makes it suitable for low-power applications.
The specific data is subject to PDF, and the above content is for reference
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