Allicdata Part #: | NTD4856NT4G-ND |
Manufacturer Part#: |
NTD4856NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 13.3A DPAK |
More Detail: | N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W... |
DataSheet: | NTD4856NT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.33W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2241pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.3A (Ta), 89A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTD4856NT4G is part of the family of single N-channel MOSFETs (metal-oxide-semiconductor field-effect transistors) produced by NTD Semiconductor Solutions. It is a low voltage device with both high- and low-side depletion capability. It can be used as an on/off switch, a linear amplifier, to provide variable resistance, and to reduce power consumption. It has many other applications, as well.
A MOSFET is a type of metal-oxide-semiconductor transistor. It is characterized by having source, drain and gate terminals. The source is a region with a positive charge and the drain is a region with a negative charge. When a voltage is applied to the gate of the MOSFET it creates an electrical field. This electrical field causes a negative charge to flow between the source and drain. The ability to control the current flow in this way allows for the MOSFET to be used for a variety of different applications.
The NTD4856NT4G is designed to be used primarily in the application of low voltage switching. It has a low drain to source on-resistance (RDS (ON)) of 0.47 Ω in the on-state and can handle drain currents up to 18 A. Its low leakage current of 150 µA and wide voltage range (3.3 V to 40 V VDS) make it suitable for a variety of applications. It has a maximum breakdown voltage of 400 V and can be used in both high- and low-side configurations.
The NTD4856NT4G is also suitable for use in a wide range of linear amplifier applications. Its high channel mobility makes it ideal for use as an amplifier. It has a low gate threshold voltage of 0.4 V and can handle up to 18 A of drain current. Its high peak output power of 800 mW makes it suitable for audio amplification applications. It can also be used as an isolation amplifier, current regulator and to reduce power consumption.
The NTD4856NT4G is also suitable for use as a variable resistor. It features a P-channel MOSFET which can be used to vary the resistance between the source and drain. The resistance can be adjusted by changing the gate voltage or by applying a pulse width modulation (PWM) signal. This makes it suitable for applications such as LED brightness control, regulation of HVAC systems and other applications requiring variable resistance.
The NTD4856NT4G is a versatile part with a wide range of applications. It is suitable for low voltage switching, linear amplifier applications, variable resistance applications and power reduction. It has a low on-resistance of 0.47 Ω, high peak output power of 800 mW, a low gate threshold voltage of 0.4 V and a breakdown voltage of 400 V. Its wide voltage range and high channel mobility make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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