Allicdata Part #: | NTD4913NT4G-ND |
Manufacturer Part#: |
NTD4913NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 32A DPAK |
More Detail: | N-Channel 30V 7.7A (Ta), 32A (Tc) 1.36W (Ta), 24W ... |
DataSheet: | NTD4913NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.36W (Ta), 24W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1013pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTD4913NT4G Application Field and Working Principle
The NTD4913NT4G is a type of power MOSFET transistor manufactured by ON Semiconductor. It is a general-purpose MOSFET transistor intended for use in a wide range of switching, level shifting, and signal conditioning applications. It can be used for applications with voltage as low as 5 volts and up to 20 volts.
Features
- Protected against parasitic body effect
- Low on-resistance for reduced power losses
- High voltage ratings
- Excellent thermal characteristics
- Low gate drive power
Application Fields
The NTD4913NT4G is suited for applications in automotive and industrial systems. Examples of application fields include motor control, digital power supplies, electronic switching, and half-bridge switching. It can also be used as a switch to provide isolation protection.
Working Principle
A MOSFET transistor is a four terminal semiconductor device that uses the charge carriers flowing through a “channel” to control the flow of current from the drain to the source. The gate electrode is used to control the channel by either allowing or blocking the charge carriers. When the gate voltage is connected, the MOSFET transistor is turned “on”, allowing current to flow from the drain to the source. When the gate voltage is disconnected, the MOSFET transistor is turned “off”, blocking the current flow.
The NTD4913NT4G MOSFET transistor has a low on-resistance to reduce power losses, allowing it to operate in switch mode with reduced heat dissipation. The transistor is also protected against parasitic body effects, so it can operate at higher voltages than other transistors.
Conclusion
The NTD4913NT4G is a versatile power MOSFET transistor designed for a wide range of applications. It has a low on-resistance for reduced power losses and excellent thermal characteristics. When used correctly, it can provide reliable operation in automotive and industrial systems.
The specific data is subject to PDF, and the above content is for reference
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