NTD4959NHT4G

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NTD4959NHT4G is a Single N-channel Enhancement Mode Field-Effect Transistor (FET) produced by Renesas Electronics. It is a voltage-controlled type semiconductor device with a very small current leakage, making it suitable for high frequency, low current applications.

Applications of FETs such as the NTD4959NHT4G vary widely and include driving circuits, analog circuits, power supply circuits, motor drive circuits, and inverters. These are used in automotive systems, information equipment, home appliances, and security systems, among other applications.

For many FETs, such as the NTD4959NHT4G, the most important feature is their extremely-low on and gate input capacitance values. This is because the capacitance plays a role in determining the speed and frequency of electrical signals. They are also characterized by a chopped gate insulation layer, aiding in the reduction of on-state resistance.

The NTD4959NHT4G consists of a vertical double-gate (VDG) MOSFET operating in an enhancement mode and is built using Renesas\' proprietary SiC (Silicon Carbide) p-channel MOSFET technology. In an enhancement mode FET, an electric field is created between the source and drain of the FET at the gate which controls the flow of current across the channel. The insulation of the gate is made up of an oxide layer which prevents current from flowing through it.

The drain to source on-resistance (RDS) of the NTD4959NHT4G is typically 122mΩ and may be as low as 94mΩ. This makes NTD4959NHT4G an ideal choice for applications needing a power-efficient device. The maximum drain source voltage (VDS) is rated at 100Volts.

Additionally, the NTD4959NHT4G has a beveled gate geometry and a high transconductance (gm) of 38mS/mm at 12V. This allows for a higher frequency and faster switching times. The NTD4959NHT4G also has a maximum gate charge of 50nC, giving it great switching performance.

The NTD4959NHT4G is available in the following package types: 9-Pin Micropak, Super-6 Pin PowerPAK, D²Pak, and D3Pak. It has an operating temperature range of -55°C to +150°C which makes it suitable for automotive and a variety of other applications.

In conclusion, the NTD4959NHT4G is an enhancement mode Field-Effect Transistor that can be used in a variety of applications. It has a low source to drain resistance, high transconductance and a beveled gate geometry, making it suitable for high frequency and low current applications. Additionally, its wide operating temperature range makes it a great choice for automotive and other systems.

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