NTD4960N-1G

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The NTD4960N-1G is a single-channel silicon n-mode Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It has been designed to be integrated into numerous different applications, and features excellent switching characteristics, insulation and dissipative performance, as well as reliable operation. It is manufactured using leading silicon MOSFET process technologies, ensuring superior product quality and reliability.The NTD4960N-1G is ideal for use in hundreds of different applications, including power electronics, motor control, robotics, automotive electronics, intelligent lighting, and solid state lighting. It is particularly well-suited for use in DC-to-DC converters, switching power supplies, and other high current, and high voltage applications.The NTD4960N-1G works by using controlling voltages/ currents to open and close the conduction between drain and source terminals. The voltage at the Gate, relative to the Source, gives the MOSFET its unique ability to provide very rapid switching with minimal gate current drain. The drain-source current varies with Gate-Source voltage and is dependent on the energy of the electrons of the channel.The NTD4960N-1G uses the N-type MOSFET structure, which means that it is designed to handle higher drain-source current per unit area than the P-type MOSFETs. This enables efficient power dissipation and superior controllability. It also features a wide range of gate-source voltages (VGS) (from -20V to +20V) which allows it to operate in a variety of voltage domains.The primary benefit of the NTD4960N-1G is its ability to switch very quickly with minimal gate current drain. This is due to its low on-resistance and wide gate-source operating range, which makes it well-suited for power applications. Its unique design also reduces dynamic-on resistance, which aids in improving conversion efficiency and reduces the switching time of the device.In addition, the NTD4960N-1G is a high-reliability device, resistant to reverse-bias with rugged body-diode characteristics. This increases its overall robustness and reliability, and ensures that it can handle high surge currents with ease. In conclusion, the NTD4960N-1G is a high-performance, reliable single-channel silicon MOSFET designed for use in numerous high-power applications. It is developed using leading silicon MOSFET process technologies, and features excellent switching characteristics, insulation and dissipative performance, as well as reliable operation. With its wide gate-source operating range and low on-resistance, the NTD4960N-1G is capable of handling high surge currents while ensuring efficient power dissipation.

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