Allicdata Part #: | NTD4969N-35G-ND |
Manufacturer Part#: |
NTD4969N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 41A IPAK-3 |
More Detail: | N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3... |
DataSheet: | NTD4969N-35G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.38W (Ta), 26.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 837pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta), 41A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTD4969N-35G is a single P-Channel transistor component, like all members of the N-Channel MOSFET ( Metal Oxide Semiconductor Field Effect Transistor ) family, and is used in a variety of electronic devices and applications. This particular component is an incredibly reliable and robust option, making it a popular choice for designers seeking dependable transistor performance, despite it\'s relatively low priced cost.The NTD4969N-35G is notable for being a particularly efficient transistor. It has a drain-source resistance ( Rds ) of only 0.0075Ω, which is significantly lower than other transistor types, making it extremely capable of handling higher levels of current. Also, it\'s maximum power dissipation ( Pd ) is up to 2.5W, which is much higher than many of its counterparts.The NTD4969N-35G is commonly used in mobile phone and computer designs, due to its relatively low-profile form factor and the ability to act as a buffer for voltage or current spikes, additional input / output control, and even switching applications. In some cases, it\'s even used in a variety of regulator-based designs, such as voltage regulator modules ( VRMs ) or switching power supplies.In terms of operating principles, the NTD4969N-35G is essentially a type of semiconductor switch. When a positive voltage is applied to a gate terminal, a small current begins to flow, creating a high resistance field between a source ( S ) and a drain ( D ) terminals. This action essentially acts as a switch, allowing current to flow through a load. It\'s through this process that both on and off state operations can be performed.Finally, another essential aspect to mention are the rated limits that must be adhered to when using the NTD4949N-35G. Specifically, the Drain-Source Voltage ( Vds ) must be kept to a maximum of -35V and the Gate-Source Voltage ( Vgs ) must not exceed -7V. Failure to adhere to these limits can potentially cause the part to become damaged and no longer function.Overall, the NTD4969N-35G is an example of a reliable and efficient single P-Channel MOSFET transistor component, used in a variety of electronic devices and applications due to its low-profile design and durable performance. By understanding the operating principles and safety warnings, designers can take full advantage of its capabilities to produce effective electronic solutions that provide users with dependable and cost-friendly results.
The specific data is subject to PDF, and the above content is for reference
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