NTMS4916NR2G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTMS4916NR2G is an N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is broadly used for a variety of switching and linear applications. It is typically used in high-speed switching applications, power management, or for general purpose amplification.

The NTMS4916NR2G consists of three terminals, the source (S), drain (D) and gate (G). When the gate of the MOSFET is driven by a suitable voltage, the channel forms between the source and drain, allowing a current to flow. This is due to the mobile electrons in the channel region of the MOSFET which are attracted by the gate and form a conducting path between the source and the drain.

The NTMS4916NR2G is designed to operate in voltage ranges between 4.5 V and 20 V with an RDSon of 0.046 Ω. The MOSFET supports a continuous drain current of 55A with a pulsed drain current of 165 A as well as an input capacitance (Ciss) of 27.8 nF. The MOSFET features excellent gate charge of 15 nC and low gate resistance (Rg) of 0.25 Ω. This makes NTMS4916NR2G suitable for very high speed switching applications and in power management applications like DC-DC converters and inverters.

This MOSFET also finds applications in linear mode as it has very low on-state resistance which allows it to operate as low a voltage drop as possible across it. It is idea for use in any applications that require Very Low On Resistance compared to the traditional bipolar transistor.

NTMS4916NR2G MOSFETs are widely used in switching circuits, motor driver circuits, and high voltage power supplies, as well as in consumer and automotive electronic equipment. NTMS4916NR2G is specifically designed and optimized to provide maximum utilization of the channel in applications requiring high performance and high current levels.

The specific data is subject to PDF, and the above content is for reference