NVMFS5833NT1G

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 112W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1714pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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NVMFS5833NT1G is a modern, low frequency N-channel logic level MOSFET designed for use in a wide range of applications. It provides low on-state resistance and high-gate source voltage capabilities to ensure efficient load switching and power conversion. The device is suited for various switching and amplifier applications and is highly suitable for digital logic circuitry. This article explores the application field and working principle of the NVMFS5833NT1G.The NVMFS5833NT1G is a low frequency, N-type MOSFET specifically designed for switching applications. It is a logic level device, meaning that its gate voltage requirements are compatible with most digital logic signal levels. The device is capable of handling large current loads with high switching speed and excellent signal quality, making it suitable for a wide range of applications. It is particularly well suited for use in switching circuits, power conversion circuits, and amplifier designs. It is also suitable for use in high frequency amplifier applications, providing a low on-state resistance and high gate-source voltage capabilities.The primary application areas for the NVMFS5833NT1G are in digital logic circuitry and switching applications. The device can be used to directly switch small loads such as LEDs, relays, and transistors, as well as larger loads such as motors and other power conversion circuits. It is also an excellent choice for high frequency amplifier designs, as its low on-state resistance and high gate-source voltage capabilities make it ideal for ensuring high efficiency power conversion.The NVMFS5833NT1G is constructed using a self-aligned, triple-layer polysilicon gate construction. The polysilicon gate construction ensures excellent signal-to-noise ratio and low threshold voltage capabilities. It is a logic level MOSFET, meaning that the gate voltage requirements are compatible with most digital logic signal levels. The device is capable of handling high switching speed and excellent signal quality, making it suitable for a wide range of applications.One of the key aspects of the NVMFS5833NT1G’s performance is its high gate-source voltage capability. This capability enables it to handle large current loads, ensuring consistent operation and reliable switching. It is built for low gate-drain capacitance, allowing for higher frequency operation. The NVMFS5833NT1G also features a low on-state resistance, which helps to ensure efficient power conversion and low power consumption.The NVMFS5833NT1G is designed to operate in ambient temperatures ranging from -55°C to +150°C. It also has a maximum permissible drain-to-source voltage of 26V and a maximum power dissipation rating of 0.8W.In conclusion, the NVMFS5833NT1G is a modern, low frequency N-channel logic level MOSFET designed for use in a wide range of applications. It is capable of handling large current loads with high switching speed and excellent signal quality, making it suitable for direct switching of small loads as well as power conversion circuits and high frequency amplifier designs. Its low on-state resistance and high gate-source voltage capabilities ensure efficient power conversion and low power consumption. All of these features combine to make the NVMFS5833NT1G an ideal device for digital logic and switching applications.

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