Allicdata Part #: | NVMFD5877NLWFT1GOSTR-ND |
Manufacturer Part#: |
NVMFD5877NLWFT1G |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 6A SO8FL |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surfac... |
DataSheet: | NVMFD5877NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.30005 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
Power - Max: | 3.2W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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,NVMFD5877NLWFT1G Application Field and Working Principle
NVMFD5877NLWFT1G is a type of Transistors - FETs, MOSFETs - Arrays. It is a powerful technology designed for high speed computing, high performance and low cost. It is used for various applications such as switched mode power supplies, DC/DC converters, and embedded systems.
What is a Transistors - FETs, MOSFETs - Array ?
Transistors - FETs, MOSFETs - Arrays are integrated circuits that contain multiple field-effect transistors (FETs). FETs are found in almost all modern electronic devices, and they are essential components because they allow field current to be regulated or switched. Transistors - FETs, MOSFETs - Arrays are composed of multiple FETs connected together in a particular pattern in order to create complex and powerful integrated circuits.
What is a NVMFD5877NLWFT1G Transistors - FETs, MOSFETs - Array?
NVMFD5877NLWFT1G is a powerful Transistors - FETs, MOSFETs - Array. It is designed to address the needs of high-speed computing, high performance, and low cost. It is composed of 64 FETs and has a gate electrode on each FET, allowing for fast switching and low power consumption. NVMFD5877NLWFT1G is capable of operating at high frequencies – up to 1700MHz – and is therefore suitable for many computing applications.
Working Principle of NVMFD5877NLWFT1G
The working principle of NVMFD5877NLWFT1G is based on the principles of MOSFETs. It is composed of multiple FETs that are arranged in a pattern that enables it to switch quickly and use low power. The FETs are connected to a gate electrode that controls how much current passes through the FETs, allowing for fast switching. NVMFD5877NLWFT1G also uses low gate capacitance – the capacitance of gate electrode – which is essential for power saving.
Applications of NVMFD5877NLWFT1G
NVMFD5877NLWFT1G is used in various applications such as switched mode power supplies, DC/DC converters and embedded systems. In switched mode power supplies, it is used to switch on and off electrical loads quickly and efficiently. In DC/DC converters, it is used to convert power from a lower voltage to a higher one, which is essential for various computing applications. In embedded systems, it is used for various control operations such as power control and data processing.
Advantages of NVMFD5877NLWFT1G
NVMFD5877NLWFT1G’s main advantages are its performance, reliability and low cost. It is designed to operate at high speeds and can switch loads quickly and efficiently. The FETs are arranged in a pattern that allows for low power consumption and minimal energy loss, making it a highly efficient solution. Additionally, it is also highly reliable as it has been designed to operate in harsh environments, and its low cost makes it a good choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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