NVMFS6B14NT1G Discrete Semiconductor Products

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The NVMFS6B14NT1G is a single FET (field effect transistor) that is capable of performing a variety of functions. This type of FET is commonly used in applications such as voltage amplification, current gain control, and analog switching. It can be found in a wide variety of electronic components and systems.

The NVMFS6B14NT1G is a single FET device comprised of three terminals, called Source, Drain, and Gate. It operates on the principles of a Capacitance-Voltage (C-V) characteristic curve. This device is also often referred to as an "N-channel FET" because it has an N-type semiconductor body. The Source terminal is connected to the N-type body (commonly referred to as the "channel") while the Gate and Drain terminals are connected to the body\'s two ends.

The FET can be used in a variety of circuits, and its application field often depends on the desired application. In audio or RF applications, the NVMFS6B14NT1G is commonly used as a voltage amplifier due to its low distortion characteristics. It is also often used as an analog switch due to its excellent frequency response and noise figure. It can also be used in power manipulation circuits for current gain control.

When the Gate receives a voltage, the resulting field causes the junction between the Source and the Drain to modulate, and the resistance between them changes accordingly. This allows the gate voltage to control the current flow between the Source and the Drain. This action is known as FET biasing, and is the key to properly operate a field effect transistor.

The NVMFS6B14NT1G feature breakdown voltage of 6 V, drain-source capacitance of 3.14 pF, gate-drain capacitance of 1.3 pF, and threshold voltage of 1.5 V. Its maximum drain current is 1.1 amps, and its operating voltage range is -60 V to 60 V. The on-resistance is also relatively low, allowing for improved performance.

The NVMFS6B14NT1G is a rugged single FET device that is suitable for a wide variety of applications. It is easy to use and offers excellent performance characteristics and reliability. This FET can be used for voltage amplification, current gain control, and analog switching in audio, RF, and power manipulation circuits.

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