Allicdata Part #: | NVMFS5832NLT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5832NLT1G |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 120A SO8FL |
More Detail: | N-Channel 40V 21A (Ta) 3.7W (Ta), 127W (Tc) Surfac... |
DataSheet: | NVMFS5832NLT1G Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.40351 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 127W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NVMFS5832NLT1G is a single FET potential-controlled device, designed to meet the needs of applications with higher-density integration requirements. This device is designed to be used in situations where there is a need for a low voltage, low power, and low-impedance circuit. It is a type of FET, which is based on the principle of charge control, and has been used extensively in the field of electronic engineering since its invention.
Its most common application field includes power management, switching, and buffering where the FET needs to perform a fast, unidirectional voltage controlled current. It is widely used in consumer electronics, automotive electronics, consumer audio and video systems, medical electronics, and computer and telecommunications systems.
The device consists of an insulated gate which is connected to a nonconductive substrate material. The substrate material is usually a layer of silicon, and the gate is usually a metal such as doped silicon, thus forming a diode or transistor-like structure. The working principle of this device involves the use of the transistor action; this is achieved by applying a large enough potential across two electrodes, or a gate, which is connected to the substrate. When the potential is applied properly, the gate oxide layer is polarized, which results in electrons being drawn to the gate and forming a conductive path between the gate and substrate.
As the gate potential increases, the current flowing through the FET increases. This current can be used to drive any type of device, such as an amplifier, power supply, or microcontroller. This is why the NVMFS5832NLT1G is such a versatile device; it can be used in a variety of applications, thanks to its versatility and its wide voltage range.
The NVMFS5832NLT1G is a reliable and efficient device and can be used in a variety of applications requiring precise and precise control of current. It is also compatible with a variety of other components, making it well suited for other applications such as low-noise signal processing, output switching, and data acquisition.
The specific data is subject to PDF, and the above content is for reference
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