NVMFS5830NLT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS5830NLT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5830NLT1G |
Price: | $ 0.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 185A SO8FL |
More Detail: | N-Channel 40V 29A (Ta) 3.8W (Ta), 158W (Tc) Surfac... |
DataSheet: | NVMFS5830NLT1G Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.66110 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 158W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5880pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 113nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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NVMFS5830NLT1G application field and working principleIntroduction: NVMFS5830NLT1G is a 30V N-channel logic-level MOSFET used in high-voltage switching applications. It is capable of delivering up to 200mA of continuous current and is ideal for use in battery-powered devices, radio frequency (RF) applications, and other applications requiring high voltage switching. The NVMFS5830NLT1G is a very capable MOSFET in terms of its performance characteristics such as low on-resistance, good switching performance, as well as its excellent thermal properties. This article will discuss the application fields and working principle of the NVMFS5830NLT1G.
Description of NVMFS5830NLT1G
The NVMFS5830NLT1G is an N-channel logic-level MOSFET which has an output drain-source voltage (Vdss) of 30V, a rated peak drain current of up to 200mA, a threshold voltage of -3V, and a low internal capacitance. These characteristics make the NVMFS5830NLT1G exceptionally well-suited for operation in high-battery-powered devices, radio frequency (RF) applications, and other applications that require high voltage switching. In particular, the low on-resistance makes the NVMFS5830NLT1G an excellent choice for power management, DC-DC converter switching, and other applications that require high-efficiency power delivery.
The NVMFS5830NLT1G also features excellent thermal performance, making it suitable for use in especially power-intensive applications. Because the NVMFS5830NLT1G is designed to dissipate heat efficiently, it is capable of operating at very high temperatures for prolonged periods of time. The device\'s low input capacitance also makes it well-suited for use in high-speed switching applications, such as switching between power supply rails in power management systems.
Application Fields of NVMFS5830NLT1G
The NVMFS5830NLT1G is well-suited for use in a variety of high voltage switching applications, such as in power management systems, DC-DC converters, and radio frequency (RF) applications. Its low on-resistance, good switching performance, and excellent thermal performance make it an ideal choice for power management systems, as it is capable of efficiently delivering high-power levels across different power rails. The NVMFS5830NLT1G is also suitable for use in DC?DC converters, where its low input capacitance makes it a great choice for power supply switching.
The NVMFS5830NLT1G is also an excellent choice for RF applications, as its low-capacitance allows for high-speed signal switching. This makes the NVMFS5830NLT1G ideal for use in high-frequency communication systems, such as mobile phones and other wireless communication devices. In addition, the device\'s good thermal performance makes it suitable for use in battery-powered devices, such as cell phones and other portable electronics, where power supply switching is often required.
Working Principle
The NVMFS5830NLT1G is a logic level MOSFET which operates on a principle of weak negative feedback. The underlying principle of operation of a logic level MOSFET is that the device\'s drain-source voltage (Vdss) is maintained at a value slightly higher than the source gate voltage (Vgs) even when a high current is drawn from the drain. This allows the NVMFS5830NLT1G to operate in a more efficient manner, as it does not require a large voltage drop across the channel as compared to conventional MOSFET devices.
The weak negative feedback of the NVMFS5830NLT1G also allows for faster switching, as it does not require a large voltage drop across the device for the switch to operate. This makes the device well-suited for use in high-speed switching applications, such as DC-DC converters and power management systems.
Conclusion: The NVMFS5830NLT1G is an excellent choice for a variety of high-voltage applications, including power management systems, DC-DC converters, radio frequency (RF) applications, and battery-powered devices. It is capable of delivering up to 200mA of continuous current, has a low on-resistance and good switching performance, and is robust against thermal damage. These characteristics make the NVMFS5830NLT1G an ideal choice for high-efficiency power delivery and high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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