NVMFD5C478NT1G Discrete Semiconductor Products

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The NVMFD5C478NT1G is an advanced semiconductor component used for a wide range of applications. It is a field effect transistor (FET) designed for use in high power and high operating frequencies applications. It is typically used in radio frequency (RF) transistor circuits and in high voltage, high frequency switching power supply (PSU) applications. It is also used in analog and digital circuit designs.

The NVMFD5C478NT1G is an array of four discrete FETs with a total drain-source voltage of 800 volts. It has a maximum source-drain current of 4.8 amps, a maximum gate-source voltage of 20 volts, and a maximum power dissipation of 6 watts. The device has an on-state resistance of 2.17 ohms and a breakdown voltage of 530 volts, with a transition frequency of 33MHz and a maximum gain of 11.5dB.

The NVMFD5C478NT1G is manufactured using Gallium Nitride (GaN) technology and is designed to operate at high frequencies while still providing high levels of performance. It is optimized for use in applications requiring high power, low noise and low frequency RF power amplifiers, linear power amplifiers, high frequency switched mode power supplies, radio frequency switching, and AC/DC switching.

The FETs in the NVMFD5C478NT1G are connected in parallel and operate using the same gate/drain/source design as other field effect transistors. The gate is connected to a control voltage which, when applied, will cause the transistor to switch on. The NVMFD5C478NT1G has both a depletion mode and an enhancement mode, which allow it to handle both switching and linear applications. In depletion mode, the gate to source voltage is used to turn the device on. In enhancement mode, the gate to source voltage is used to turn off the device.

The NVMFD5C478NT1G is designed to be used in high power, high frequency switching applications. It can be used for digital and analog switching, and for switching of large signals such as audio and video signals. The device is also designed to reduce noise and reduce switching times. The FETs in the device are also designed to be low impedance and are capable of providing low output impedance under high frequency, high power switching conditions.

In conclusion, the NVMFD5C478NT1G is a high power and high frequency field effect transistor that is optimized for use in applications requiring high power, low noise and low frequency RF amplifiers, linear power amplifiers, high frequency switched mode power supplies, radio frequency switching, and AC/DC switching. It is an array of four separate FETs, connected in parallel, and operates with both depletion and enhancement modes. The NVMFD5C478NT1G is designed to reduce noise and reduce switching times, and provide low output impedance under high frequency, high power switching conditions.

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