NVMFS6H801NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS6H801NT1GOSTR-ND |
Manufacturer Part#: |
NVMFS6H801NT1G |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRENCH 8 80V NFET |
More Detail: | N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W ... |
DataSheet: | NVMFS6H801NT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.54186 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 166W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4120pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 157A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NVMFS6H801NT1G is a MOSFET device. It is a type of transistor, a class of semiconductor that allows current to flow through it in a controlled manner. A transistor is a switch that can control the flow of electricity without breaking the electrical connection. MOSFET stands for metal oxide semiconductor field effect transistor, which is a type of transistor used to control current flow in a circuit. It is an insulated gate field effect transistor with a high performance breakdown voltage and a low input capacitance.The NVMFS6H801NT1G is a single-channel MOSFET device, meaning it has only one electrical path through it. It is also a power MOSFET, which means it has the ability to control larger current and higher voltages than other types of transistors. It is designed to work in a variety of applications, ranging from power conversion and motor control to switching and protection circuits.The NVMFS6H801NT1G has a drain-source breakdown voltage rating of 800V, which is relatively high for a single transistor. It has an on-resistance of 210mΩ and an operating temperature range of -55°C to +150°C. This device is also very efficient, with a low gate-source charging current of only 10nA. This makes it ideal for use in applications where high efficiency and low power loss is required.The NVMFS6H801NT1G works by using a gate voltage to control the current flow through the device. When a positive voltage is applied to the gate, it creates an electric field in the insulated oxide layer, creating a channel between the source and the drain. This channel allows current to flow through, depending on the voltage applied to the gate. When the voltage is removed, the channel is blocked, preventing current flow.The NVMFS6H801NT1G is used in a variety of applications including automotive, mobile, consumer electronics, and industrial control. In automotive applications, it is used as a power switch in engine control systems and to drive high power loads such as motors. In consumer electronics, it is used in voltage regulators and power factor controllers. In industrial control, it is used for motor speed control and switching applications.The NVMFS6H801NT1G is a highly reliable device, with a dielectric strength of up to 5000V and an insulation resistance of up to 109Ohms. It is a small, yet powerful device, making it ideal for use in space-constrained applications. This device is relatively easy to use, requiring only a few external components for operation.
The specific data is subject to PDF, and the above content is for reference
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