Allicdata Part #: | NVMFS5C423NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C423NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 126A SO8FL |
More Detail: | N-Channel 40V 31A (Ta), 150A (Tc) 3.7W (Ta), 83W (... |
DataSheet: | NVMFS5C423NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C423NLWFT3G transistors, a class of Field Effect Transistors (FETs), are a type of power semiconductor. The acronym NVMFS5C423NLWFT3G stands for N-channel Vertical Metal-oxide Field-Effect Transistors of Size 5, with a 4-pin package type and 2-pin voltage level (3G). They are single FETs, which means that a single FET can conduct and block electric signals. As such, NVMFS5C423NLWFT3Gs are especially suited to low power, high fidelity applications.
In a NVMFS5C423NLWFT3G transistor, the source terminal is where an electric current enters the transistor, while the drain terminal is where current exits the transistor. In between these two terminals sits a controlled gate, which determines when and how much current will be allowed to pass. This gate is placed above and insulated from the underlying channel by a layer of metal oxide material. The underlying channel is the conducting path between source and drain.
The working principle of NVMFS5C423NLWFT3G transistors depends on the interaction between the electric current and the charged particles within an electric field. When an electric field is applied to the gate, it creates a layer of electric charges that modulate the conductivity of the channel through which the electric current passes. By modulating the conductivity of the channel, the NVMFS5C423NLWFT3Gtransistor is capable of blocking or allowing current when the gate voltage is adjusted.
NVMFS5C423NLWFT3G transistors are widely used in low power, high fidelity applications such as audio amplifiers, mixing consoles, and power supplies. In audio amplifiers, they are used as voltage amplifiers to provide amplification to the audio signal. In mixing consoles, they are used to control the voltage gain and transimpedance of the audio signal. Lastly, in power supplies, NVMFS5C423NLWFT3G transistors are used as switches that can quickly switch on and off to regulate the voltage.
NVMFS5C423NLWFT3G transistors are a versatile, efficient, and cost effective choice for low power, high fidelity applications. They are designed to be able to handle high voltages and currents, and are well suited for applications that require high speed switching and signal processing. Moreover, they can easily and quickly be modified to conform to various circuit design requirements. With their versatility and efficiency, it is no wonder that NVMFS5C423NLWFT3G transistors are so widely used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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