Allicdata Part #: | NVMFS5C430NLWFAFT3G-ND |
Manufacturer Part#: |
NVMFS5C430NLWFAFT3G |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 38A 200A 5DFN |
More Detail: | N-Channel 40V 38A (Ta), 200A (Tc) 3.8W (Ta), 110W ... |
DataSheet: | NVMFS5C430NLWFAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.39603 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 200A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C430NLWFAFT3G is a type of single MOSFET (metal oxide semiconductor field effect transistor). It is designed to be used as an electronic switch in various applications. This article will discuss the applications and working principle of this device.
Applications
NVMFS5C430NLWFAFT3G is primarily used for switching applications. It can be used to control the flow of electricity in a circuit or to control the gate voltage of another MOSFET. It is commonly used in many different devices, including: amplifiers, inverters, voltage regulators, CPUs, phase-locked loops, and switching regulators. It is also used to provide isolation between components in a circuit and to provide surge protection.
NVMFS5C430NLWFAFT3G is well suited for applications where low power consumption, small size, and high switching speed are desired. It is also ideal for applications where optical isolation is needed as it is capable of working at very high voltages and currents.
Working Principle
MOSFETs are field effect transistors that are electrically operated. They are composed of three terminals - source, gate, and drain. When a voltage is applied to the gate terminal, it creates an electric field which attracts and repulses electrons in the n-type region, allowing for current to flow between the source and drain terminals.
In an NVMFS5C430NLWFAFT3G MOSFET, a voltage applied to the gate terminal controls the flow of current between the source and drain terminals. It has a very low input capacitance and a high voltage breakdown, allowing it to switch off quickly and efficiently. The device has a fast switching time of 4ns max and can be used for high-frequency applications.
The on-resistance of an NVMFS5C430NLWFAFT3G is typically around 0.02 ohms, meaning it has a very low resistance when in the “on” state. This allows the device to dissipate very little power, making it more efficient than other types of transistors.
NVMFS5C430NLWFAFT3G is a common choice for applications where high-speed switching is required, such as in power supplies, converters, and inverters. It is also useful for applications where low dissipated power is desired, such as in high frequency, light-load or logic circuits. Additionally, its low input capacitance makes it ideal for use in high-frequency logic applications, where the switching time has to be fast.
NVMFS5C430NLWFAFT3G is a high voltage, high performance MOSFET with excellent switching performance. It is a versatile device which is suitable for a wide variety of applications, making it a popular choice for many industries. It is easy to use, reliable and offers superior performance compared to other types of transistors.
The specific data is subject to PDF, and the above content is for reference
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