Allicdata Part #: | NVMFS5C670NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C670NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 71A SO8FL |
More Detail: | N-Channel 60V 17A (Ta), 71A (Tc) 3.6W (Ta), 61W (T... |
DataSheet: | NVMFS5C670NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 71A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C670NLWFT3G is a type of Field Effect Transistor (FET). FETs are semiconductor devices commonly used in digital and analog circuits, which can control a large amount of current and voltage with a very small signal. NVMFS5C670NLWFT3G is a single FET, a type where the gate is isolated from the channel by a physical barrier. The NVMFS5C670NLWFT3G is a N-channel, Enhancement-Mode Power MOSFET.
The main application field of the NVMFS5C670NLWFT3G is power conversion and motor control, such as with DC-DC and AC-DC converters or motor speed controllers for brushed and brushless DC motors. It is an ideal choice for these applications, as it offers low ON resistance, high switching speed, and extremely low gate-source threshold voltage, which enable fast and efficient device switching. It also features a robust lead-free build and long-term reliability and stability. The maximum drain-source voltage is 30V and the maximum drain current is 32A.
In operation, the NVMFS5C670NLWFT3G works by using a small electrical signal applied to the gate terminal to control the flow of current flowing between the source and the drain. The NVMFS5C670NLWFT3G is an enhancement-mode FET, which means that the current will flow between the source and the drain only when the gate-source voltage is more positive than the device\'s threshold voltage. This threshold voltage is typically zero or very close to it, meaning that the device will turn on very quickly when the gate is activated. The device\'s ON resistance, or Rds(on), determines how much current will flow when the gate voltage is sufficient to turn the device on. The NVMFS5C670NLWFT3G has an ON resistance Rds(on) of 0.15 ohms, which allows for extremely efficient current switching.
The NVMFS5C670NLWFT3G also features drain-source and gate-source doublers that allow the device to operate at higher voltages and currents than other devices in its class. This means that the NVMFS5C670NLWFT3G is able to efficiently control and manage higher amounts of power than other FETs, making it a great choice for a variety of power conversion and motor control applications. In addition, the device is RoHS compliant, meaning that it meets all environmental standards.
In conclusion, the NVMFS5C670NLWFT3G is a high-performance single FET that is ideal for a variety of power conversion and motor control applications. It features low ON resistance, high switching speed, extremely low gate-source threshold voltage, drain-source and gate-source doublers, and long-term reliability and stability, making it a great choice for high-power applications. Additionally, the NVMFS5C670NLWFT3G is RoHS compliant, meaning that it meets all environmental standards.
The specific data is subject to PDF, and the above content is for reference
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