NVMFS5C404NLAFT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS5C404NLAFT1G is a popular field-effect transistor (FET) in the semiconductor industry. It’s a single-gate FET with N-channel silicon (Si) which is well-suited for low current switching, amplifying and signal shaping. NVMFS5C404NLAFT1G can be used in many different application fields, such as digital circuits, analog circuits and power electronics.

NVMFS5C404NLAFT1G has a low threshold voltage of 0.8V and a high breakdown voltage of 20V. As compared to other FETs, the NVMFS5C404NLAFT1G offers improved performance in terms of switching speed and power dissipation. Furthermore, the FET offers a low on-resistance of 4.2Ω, which makes it an ideal choice for applications requiring lower power consumption.

The working principle of the NVMFS5C404NLAFT1G FET is quite simple. A gate voltage is applied to the gate of the transistor which modulates the amount of current flowing through the device. The voltage applied to the gate controls the current flow, enabling the user to turn the device on or off. This is the fundamental way in which the NVMFS5C404NLAFT1G works.

NVMFS5C404NLAFT1G is a widely used FET in many applications. It’s versatile and reliable, making it an ideal choice for a variety of tasks. It’s popular for use in digital logic, analog amplifiers, some power electronics, and for switching flyback transformers. NVMFS5C404NLAFT1G is also a great choice for embedded systems that require lower power consumption.

The NVMFS5C404NLAFT1G FET is an excellent choice for a variety of applications and is relatively easy to integrate into circuits. Its small size and low power consumption make it an attractive option for many tasks. Its performance is superior to most other FETs in its class, making it a great choice when seeking reliable performance.

The specific data is subject to PDF, and the above content is for reference