NVMFD5877NLT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NVMFD5877NLT1GOSTR-ND |
| Manufacturer Part#: |
NVMFD5877NLT1G |
| Price: | $ 0.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 60V 6A 8SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surfac... |
| DataSheet: | NVMFD5877NLT1G Datasheet/PDF |
| Quantity: | 1500 |
| 1500 +: | $ 0.28136 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 6A |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
| Power - Max: | 3.2W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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The NVMFD5877NLT1G, or Non-Volatile Field Effect Transistor Array, is a part of the wide variety of Field Effect Transistor (FET) family. It includes a total of six N-Channel type FETs and is commonly used in low frequency amplifier circuit design. Applications for the NVMFD5877NLT1G include low frequency analog signal amplifiers, non-volatile voltage regulators, power supply circuits, and many other analog circuit applications.
The NVMFD5877NLT1G features a non-volatile FET circuit array that provides reliable, low noise amplification of low frequency analog signals. It is designed to provide high linearity and low offset voltage. The NVMFD5877NLT1G also features a low input bias current and low input offset current, which make it ideal for low frequency amp applications.
The NVMFD5877NLT1G includes six N-Channel FETs, which consist of three gate source terminals and three source drain terminals. The FETs are arranged in a single-sided layout, with one gate source terminal connected to the opposite source drain terminal, and the other two gate source terminals connected to the other source drain terminals.
The NVMFD5877NLT1G works by allowing current to flow from the gate source terminal through the source drain terminal when a voltage is applied to the gate. This voltage will raise the voltage on the source drain terminal, which allows current to flow through the circuit, thus amplifying the signal. It should be noted that the NVMFD5877NLT1G is designed to amplify signals with a frequency lower than 4 MHz.
The NVMFD5877NLT1G features a wide range of features that make it ideal for low frequency analog signal amplification applications. These features include a low input offset voltage, low input bias current, low gate threshold voltage, low input impedance, and low power consumption. The NVMFD5877NLT1G also features a wide temperature range and is capable of operating from -40 to +125°C.
The NVMFD5877NLT1G is the perfect solution for any low frequency amplifier circuit design. Its low input bias current and low input offset current combined with its wide range of features make it ideal for a variety of low frequency analog amplifier circuits, from single-stage amplifiers to power amplifier circuits. The NVMFD5877NLT1G is a reliable and cost-effective solution for low frequency analog circuity applications.
The specific data is subject to PDF, and the above content is for reference
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NVMFD5877NLT1G Datasheet/PDF