NVMFD5C674NLT1G Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs:	14.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 25V
Power - Max:	3W (Ta), 37W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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NVMFD5C674NLT1G Arrays of Transistors and FETs - Working Principle and Applications

The NVMFD5C674NLT1G is an integrated circuit (IC) consisting of an array of transistors and field-effect transistors (FETs) on a single chip. This specific IC is designed for high-speed switching and power switching applications, and is composed of P-channel and N-channel depletion-mode MOSFETs (NMOSFETs).This integrated “chip” offers an array of 8 NVMFD5C674NLT1G transistors and FETs in a surface mount device (SMD) package. It is ideally suited for data-path management applications and other systems requiring high speed switching and high power switching. Its small size and high level of integration makes it suitable for many applications.The NVMFD5C674NLT1G has several advantages over other switching devices. It offers low power consumption, low operation and standby current consumption, and high-frequency switching operation. Its hot-swapping capability allows for power switching operations with low turn-on time. In addition, it provides over-temperature protection and short- and open-circuit protection.The NVMFD5C674NLT1G has two modes of operation: active and standby. In active mode, all of the transistors and FETs are operational and can be used for switching applications. In standby mode, some of the transistors are turned off to reduce power consumption. This mode allows for faster turn-on time and reduced power consumption compared to active mode.The NVMFD5C674NLT1G can be used in a variety of applications, including audio amplification, automotive body electronics, active and standby power switching, and power over Ethernet (PoE) applications. It is also used in consumer electronics, such as DVD players, Bluetooth headphones, mobile phones, and other consumer products.The working principle of the NVMFD5C674NLT1G is based on the principle of depletion-mode MOSFETs. A depletion-mode MOSFET is a type of field-effect transistor (FET) that is designed to operate with a high “on” resistance when there is no current applied to the gate. This type of FET is commonly used in power switching applications because it has a low “on” resistance, allowing for higher power switching applications.The NVMFD5C674NLT1G is composed of 8 depletion-mode MOSFETs, each with its own gate. In order to turn on the FETs, a voltage is applied to each of the gates. This causes the channel in between the source and the drain of the FET to become conductive, allowing current to flow. This is the basic principle behind the NVMFD5C674NLT1G switching device.In summary, the NVMFD5C674NLT1G is a type of integrated circuit composed of an array of transistors and field-effect transistors (FETs) on a single chip. It is designed for high-speed switching and power switching applications and is composed of P-channel and N-channel depletion-mode MOSFETs. Its small size and high level of integration makes it suitable for many applications, such as data-path management, audio amplification, automotive body electronics, active and standby power switching, and power over Ethernet (PoE) applications. The working principle of the NVMFD5C674NLT1G is based on the principle of depletion-mode MOSFETs, which require a voltage to be applied to the gate in order to turn them on.

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