NVMFS5C404NT1G

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NVMFS5C404NT1G is one of the most commonly used insulated gate Field Effect Transistors (IGFET) or Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) available on the market. It is a single discrete transistor and is typically used for medium power applications.

As an edge device, the NVMFS5C404NT1G can be used in the low voltage applications. It has an N-channel and can operate from −55°C to +150°C junction temperature without any derating. It also has an extended drain P-channel which offers low power and high noise immunity for automotive applications.

The nominal VDS of the NVMFS5C404NT1G is 30V and its nominal VGS of ±20V. It also has a maximum drain current of 42A, a maximum gate-source voltage of ±25V, and a maximum power dissipation of 110W. This makes it suitable for medium power applications.

The working principle of the NVMFS5C404NT1G is based on the Field Effect Transistor (FET) effect. FETs are current-controlled devices and are characterized by their gate voltage bias and gate-to-source capacitance. The input voltage at the gate controls the channel between the source and drain and modifies the electrical behavior of the current flowing through the drain. The drain current is determined by the voltage at the gate and the capacitance of the gate-to-source junction.

The NVMFS5C404NT1G uses the FET principle to make a highly efficient electrical device. It has a low on resistance and a high current-handling capability, making it ideal for use in medium power applications. It is also characterized by its low power consumption, making it an energy-efficient choice.

Due to its wide frequency range and high energy efficiency, the NVMFS5C404NT1G is a popular semiconductor component for medium power applications. It can be used for switching, amplification and power management in a variety of systems. It is also used in automotive applications, monitors, amplifiers and solar panels.

The NVMFS5C404NT1G is a reliable, efficient and low-power transistor and is a great choice for medium power applications. Its extended drain P-channel offers low power and high noise immunity for automotive applications and its wide frequency range makes it well-suited for many applications. It is also highly energy-efficient, making it an attractive option for those looking for an energy-efficient transistor.

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