NVTFS4823NWFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS4823NWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS4823NWFTAG |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 30A U8FL |
More Detail: | N-Channel 30V 13A (Ta) 3.1W (Ta), 21W (Tc) Surface... |
DataSheet: | NVTFS4823NWFTAG Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.23868 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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NVTFS4823NWFTAG (NVTFS) is a single-gate, Metal–oxide–semiconductor field-effect transistor (MOSFET). It is a specialized device designed for power supply, high voltage, and high current applications. The NVTFS is used in a variety of high frequency and power applications, such as radio-frequency amplifiers, switch-mode power supplies, and inverters. It is a leading device in its class, and is widely recognized as a highly reliable and versatile MOSFET.
The NVTFS is a single-gate MOSFET with a difference – it offers a very low on-resistance for gate switching operations, making it an ideal choice for high-current and high-voltage operations. The device also offers excellent thermal stability and resistance to thermal cycling. This makes it an excellent choice for use in high-power applications, such as power supply and inverter designs.
The NVTFS is constructed with a specialized device architecture which allows it to handle very high voltages and currents while still maintaining a very low on-resistance. The gate is built on a silicon die and is surrounded by a gate oxide layer. This oxide layer provides protection to the gate, allowing it to withstand very high voltages without damage. The gate is also equipped with a number of specialized contact regions which are used to connect the gate to external circuits.
The working principle of the NVTFS is fairly simple. When the gate voltage is applied to the device, it will create a vertical electric field across the device. This electric field will allow electrons from the source terminal to flow through the channel, then out to the drain terminal. The strength of this electric field is determined by the gate voltage, which can be increased or decreased as needed to control the amount of current flowing through the channel. This allows the NVTFS to be used as a switching device, allowing higher currents to be switched at higher speeds.
The NVTFS is a very versatile device, and is ideal for applications which require high voltages and current levels, while maintaining very low on-resistance. It can be used in a variety of power and high-frequency applications, such as radio-frequency amplifiers and switch-mode power supplies. It is also an excellent choice for use in making high-quality inverters, due to its high voltage and current capabilities.
The specific data is subject to PDF, and the above content is for reference
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