NVTFS5116PLWFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5116PLWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5116PLWFTAG |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 14A U8FL |
More Detail: | P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface ... |
DataSheet: | NVTFS5116PLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.35569 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1258pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVTFS5116PLWFTAG is a non-volatile through field silicon transistor (TFS), which belongs to the single field effect transistor (FET) family. It is a high speed, low power, N-type MOSFET device, and is a critical component for high speed applications and design.
The NVTFS5116PLWFTAG is designed to be used as a switch, either as a voltage regulator or power switch, in a variety of high frequency circuits and applications. It is an ideal choice for systems that require simultaneous control of current, voltage and power.
The main application fields of the NVTFS5116PLWFTAG include radio frequency communication, high speed data transmission, voltage regulation, and power supply. Moreover, it is also suitable for applications in robotic systems, automation, and other applications where current and voltage ratings, as well as speed and power, need to be balanced.
The working principle of the NVTFS5116PLWFTAG is based on the use of a gate control voltage, which is applied to the N-type MOSFET gate terminal. The gate voltage is used to control the properties of the N-type FET, including the drain to source current, the on/off resistance, and the speed at which the transistor can switch.
The drain current of the NVTFS5116PLWFTAG is controlled by varying the gate voltage, which in turn affects the drain to source resistance. As the gate voltage is increased, the resistance decreases, allowing more current to flow through the device. This makes the NVTFS5116PLWFTAG ideal for low voltage, high frequency applications such as radio frequency receivers and transmitters.
The brake down voltage, or the turn-on voltage, of the N-type FET, determines the on/off resistance of the device. The gate voltage must reach this brake down voltage before the FET is turned on and current will begin to flow. The NVTFS5116PLWFTAG is capable of operating at very low brake down voltages, allowing for faster switching speeds and greater efficiency.
The on/off switching speed of the NVTFS5116PLWFTAG is dependent on the gate capacitance, or the “gate charging time”. The gate capacitance is the total combination of the base, gate and body capacitances of the device. As the gate voltage is increased, the speed of switching is increased, allowing for faster switching times.
The NVTFS5116PLWFTAG has performance advantages over standard insulated gate transistors, making it ideal for high frequency, low power applications. It is a cost effective, high performance, low power, and reliable piece of field effect transistor technology.
The specific data is subject to PDF, and the above content is for reference
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