NVTFS5116PLTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5116PLTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5116PLTAG |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 14A 8WDFN |
More Detail: | P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface ... |
DataSheet: | NVTFS5116PLTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.31005 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1258pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:NVTFS5116PLTAG is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in a variety of electronic applications. It is a single-channel, enhancement-mode field effect transistor (FET) that is used to regulate the current flow between source and drain using a gate voltage. The device is specifically designed for switching applications, as it allows for fast switching behavior in order to ensure operations are sufficiently fast.
The NVTFS5116PLTAG is designed primarily for switching applications, such as analog audio, automotive and general control applications. It is well suited for these applications due to its low gate drive requirements and its low on-state resistance. It is also useful in high-current applications, as its R DS(on) value is quite low, meaning that it can handle high current. Additionally, it has high peak surge current capabilities, meaning that it can handle short-term, high peak currents with ease.
The NVTFS5116PLTAG is an n-channel, enhancement-mode MOSFET, meaning that it is constructed using n-type material and has an enhancement-mode operation. This means that the current flow from source to drain is controlled by the gate voltage, which is applied between the gate and the source terminal. When a positive gate-source voltage is applied, the device will be turned on, allowing for a current to flow from source to drain. When a negative gate-source voltage is applied, the device will be turned off and no current will flow from source to drain.
Another important aspect of the NVTFS5116PLTAG is its low power consumption. It is designed to operate at only 4V, making it ideal for low-voltage applications. Additionally, its low power consumption means that it is highly efficient and can be used in high-reliability applications. Furthermore, its flexibility means that it can be used in a wide variety of applications, making it a versatile device.
The NVTFS5116PLTAG is a versatile device that is well suited to a wide variety of applications. Its low power consumption means that it is highly efficient and can be used in low-voltage applications. Additionally, its high peak surge current capabilities make it suitable for high-current applications. Furthermore, its fast switching behavior ensures that the device can be used in high-reliability applications, making it an ideal choice for switching applications.
The specific data is subject to PDF, and the above content is for reference
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