Allicdata Part #: | NVTFS4C13NTWG-ND |
Manufacturer Part#: |
NVTFS4C13NTWG |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 40A U8FL |
More Detail: | N-Channel 30V 14A (Ta) 3W (Ta), 26W (Tc) Surface M... |
DataSheet: | NVTFS4C13NTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.15233 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 26W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVTFS4C13NTWG is a type of N-Channel Trench Field-Stop (TFS) metal–oxide–semiconductor field-effect transistor (MOSFET) developed by N-TRON Corp. It is a power device that has several unique features that makes it suitable for a wide range of applications, such as switching power supplies, motor drives, and electronic systems.
The NVTFS4C13NTWG has an on-resistance (RDSon) of 0.002 ohms, which makes it very efficient in terms of power conversion. It also has very low gate charge (Qg) which helps reduce power consumption during switching operation. Furthermore, its low capacitance (Ciss) and fast reverse-recovery time helps reduce switching noise, thus making it suitable for operation at high frequencies.
The NVTFS4C13NTWG MOSFET is a single device. It consists of a single P-Channel TFS MOSFET in a DPAK package. The single P-Channel TFS MOSFET allows for higher current densities and higher switching speeds than other MOSFET packaging approaches that use multiple devices. In addition, the NVTFS4C13NTWG operates at voltages up to 18V. This allows for operation up to full load under a wide range of operating conditions.
The working principle of the NVTFS4C13NTWG is the same as any other MOSFET. It is based on the principle of carrier injection and depletion. The gate of the device acts as a voltage-controlled switch, allowing the current to flow through the device when the gate voltage is applied. The gate voltage determines the amount of current that can flow through the device. When the gate voltage is increased, more electrons are drawn into the channel region, which increases the current flow.
The primary application field of the NVTFS4C13NTWG is in power conversion. It is suitable for use in switchers, converters, drives, and regulators. Due to its fast switching capability and low capacitance, the NVTFS4C13NTWG is ideal for use in high frequency applications. Furthermore, due to its low on-resistance, high reliability, and wide voltage operating range, the NVTFS4C13NTWG is well-suited for applications in power management systems.
In summary, the NVTFS4C13NTWG is a single N-Channel TFS MOSFET device developed by N-TRON Corp. It has several unique features that make it suitable for a wide range of applications in the power conversion industry. Additionally, its efficient power conversion, fast switching speeds, and low capacitance all make it suitable for high-frequency applications. Furthermore, its wide voltage operating range and low on-resistance make it well-suited for power management systems.
The specific data is subject to PDF, and the above content is for reference
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