NVTFS4C08NWFTWG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVTFS4C08NWFTWG stands for N-channel enhancement mode Vertical double diffused MOS (Metal Oxide Semiconductor) transistor with the suffix “WFTWG” indicating their designation within Toshiba’s lineup of MOS transistors. This particular device is well suited for low- to mid-power applications, given its rated drain current of 8 amperes and its drain-source voltage rating of 400 volts.

MOSFETs (metal-oxide-semiconductor field-effect transistors) are a type of transistor which controls current between two terminals, known as the source and the drain, by varying the voltage applied to the gate within a semiconductor path. By altering the voltages applied to the gate, the current will be regulated, allowing for the circuit to perform various functions. The NVTFS4C08NWFTWG is an example of such a transistor, with the number of terminals allowing it to be applied to numerous applications.

The NVTFS4C08NWFTWG is characterized by its high speed switching, which makes it suitable for high frequency functions. Its low on-resistance ensures that the circuit is capable of superior switching performance, and also allows for power efficiency. This particular device is thus often employed as a switch for driving light sources as well as for controlling current in home appliance circuits.

This type of transistor also finds extensive use in the automotive industry. It is often used to regulate the current in air conditioning systems, as well as controlling the voltage of the generator alternator. Additionally, it can be found regulating the current in lighting and signals systems in modern vehicles. Its ability to switch efficiently and quickly lends itself to numerous applications in the automotive sector.

More generally speaking, the NVTFS4C08NWFTWG can be used in a wide variety of tasks where its characteristics are advantageous. As a single transistor N-channel device, its ability to switch quickly and with low on-resistance makes it well suited to various applications ranging from home appliance circuits to automotive control systems.

The working principle of the NVTFS4C08NWFTWG is based predominantly on capacitance modulation, which is achieved via a metal-oxide-semiconductor layer formed between the gate and the source-drain. This layer produces an electric field, which in turn governs the movement of charges within the device and controls the current running between the source and drain. Through judicious manipulation of the voltages applied to the gate, the flow of current can thereby be regulated as desired.

In addition to capacitance modulation, the NVTFS4C08NWFTWG is also capable of performing a variety of other functions depending on the application. In some cases it can be used as a voltage multiplier or an amplifier, while in others it can be employed as a switch. Depending on the circuit parameters and desired level of performance, different techniques and configurations may be utilized to take advantage of the transistor’s multiple capabilities.

Overall, the NVTFS4C08NWFTWG is a versatile, efficient and high-speed transistor, correctly applied to a wide range of applications as a single N-channel device. Its ability to perform multiple functions as well as regulate current allows for numerous possibilities in terms of application design.

The specific data is subject to PDF, and the above content is for reference