NVTFS5116PLTWG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5116PLTWGOSTR-ND |
Manufacturer Part#: |
NVTFS5116PLTWG |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 14A 8WDFN |
More Detail: | P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface ... |
DataSheet: | NVTFS5116PLTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.27491 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1258pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS5116PLTWG Application Field and Working Principle
Transistors - FETs, MOSFETs - Single
The NVTFS5116PLTWG is a single-gate MOSFET, part of the MOSFET family of field-effect transistors. It is manufactured by N-Volt and is made from silicon dioxide and other elements, this making it suitable for use in many environments and applications. The NVTFS5116PLTWG is primarily used as an amplifier and for switching purposes, as it is capable of handling high voltages and currents.
Application Field
The NVTFS5116PLTWG has a variety of application fields, due to its combination of high power, low noise, low voltage operation and robustness. It is considered suitable for all kinds of electronic circuits, including those used in communications, power electronics, automotive electronics and even medical applications. The NVTFS5116PLTWG also offers good protection from heat and corrosion due to its construction from silicon dioxide and other elements.
Furthermore, the NVTFS5116PLTWG is able to handle both low voltage and high voltage operations. It is capable of controlling current up to seven amps and voltage up to 500 volts, making it suitable for the more demanding applications. As mentioned before, the NVTFS5116PLTWG has low noise operation which makes it ideal for use in communications circuits where a minimal amount of noise is desired. Furthermore, it is suitable for use in power electronics circuits due to its ability to handle higher voltages and currents.
Working Principle
The NVTFS5116PLTWG is classified as a single-gate MOSFET and has a three terminal connects. These are the source, the drain and the gate. When a low voltage AC or DC is applied to the gate, it allows electricity to flow between the source and the drain. This occurs due to the wave propagation of the MOSFET’s internal capacitance, which allows the gate to change between conducting and non-conducting states. This causes the MOSFET to act as an amplifier or a switch for specific applications.
The NVTFS5116PLTWG has a high insulation resistance, which makes it suitable for applications requiring a higher resistance. Its on-resistance is also considerably low which is ideal for applications requiring efficient switch control. Furthermore, its SOA (safe operating area) is higher than most MOSFETs, making it suitable for use in more demanding applications.
In conclusion, the NVTFS5116PLTWG is a single-gate MOSFET suitable for a variety of application fields. It is capable of handling high voltages and low noise operations, making it perfect for communications or power electronics. The NVTFS5116PLTWG is robust and highly efficient, making it ideal for even the most demanding requirements. Furthermore, its low on-resistance and high safe operating area make it perfect for use in switches or amplifiers.
The specific data is subject to PDF, and the above content is for reference
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