Allicdata Part #: | NVTFS5C478NLWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5C478NLWFTAG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 40V 26A 8WDFN |
More Detail: | N-Channel 40V 26A (Tc) 20W (Tc) Surface Mount 8-WD... |
DataSheet: | NVTFS5C478NLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.20286 |
Vgs(th) (Max) @ Id: | 2.2V @ 20µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVT FS5C478NLWFTAG field effect transistor (FET) is a commonly employed solution for a variety of electrical applications. This solid-state device utilizes the movement of electrons between a source and a drain of a semiconductor material in order to control current flow from the source to the drain. FETs are useful in applications requiring low power consumption, high-frequency switching, and low signal distortion, such as audio circuits, switching amplifiers, and high-speed logic systems. They are also popular for use in digital signal processing and signal source applications, including radio frequency (RF) and microwave circuits.
The NVT FS5C478NLWFTAG is a single N-channel enhancement mode FET. It is constructed from a N-type semiconductor substrate with a given channel thickness that serves to control the movement of electrons and current, and a pair of source and drain contacts that regulates current flow between the two. When the FET is in its “off” state, no current is drawn between the source and drain, but when a voltage is applied to the gate, electrons flow, and a steady current between the source and drain is generated.
The N-channel FET offers several unique qualities and benefits. Its electrical characteristics allow for better signal source control, through precision positive input/output swing control and improved resistance to signal distortions. Additionally, the device’s ability to dissipate heat quickly improves its energy efficiency and helps to omit several of the design issues associated with bipolar transistors. Furthermore, the NVT FS5C478NLWFTAG can be used in configurations where several FETs are connected in parallel, which allows for higher current loads, longer life span, and better power management.
The NVT FS5C478NLWFTAG’s most common uses are pulse-width modulation (PWM), field-effect control, and power electronic applications. As a PWM device, the FET can be used to regulate motor speed and torque, act as a generator, and convert input frequency. In field effect control, it can be used in circuits to switch analog signals, allowing them to be amplified and/or modulated. Finally, the FET is an extremely versatile component for use in various power applications, such as AC-DC converters and classes of power supplies requiring high switching speed and efficient operation.
The FET is known for its reliability and low failure rate, making it the ideal choice for long-term applications. The device is also power-saving due to its low gate and drain-to-source voltage limit, and its channel width can be adjusted depending on the current load needed. With its wide variety of uses in both analog and digital circuits, the NVT FS5C478NLWFTAG is well suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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