Allicdata Part #: | NVTFS5C670NLWFTAG-ND |
Manufacturer Part#: |
NVTFS5C670NLWFTAG |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 16A 70A 8WDFN |
More Detail: | N-Channel 60V 16A (Ta), 70A (Tc) 3.2W (Ta), 63W (T... |
DataSheet: | NVTFS5C670NLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.34488 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.Transistors are notable electronic components that are used in a variety of applications, and NVTFS5C670NLWFTAG is one of them. This particular transistor belongs to the family of Field Effect Transistors (FETs) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and is a single-substrate type. It is commonly used in a variety of industries as a switch, amplifier, and for other purposes.
The exterior components of the NVTFS5C670NLWFTAG include a source, drain, gate, and substrate. The source is an electrical contact that supplies current to the drain, and drain is an electrical connection to the component. The gate is an electrical contact that controls the flow of current, while the substrate is an insulating material that provides an electrical path between the source and drain.
The working principle of this transistor is based on the application of an electric field to the source and the drain. When a positive voltage is applied to the gate, a field develops between the source and drain of the transistor, allowing current to flow. This field is created by the changing voltage across the gate and the source, which creates an electrical field that attracts electrons from the source.
NVTFS5C670NLWFTAG is used primarily in automotive and telecommunications applications. It is commonly used as a driver for small motor applications, such as windshield wipers and other automotive components. It can also be used in amplifying audio signals, as well as in digital logic circuits. In telecommunications applications, it is used as a switch component in cellular base stations and other radio frequency devices.
The NVTFS5C670NLWFTAG has become an important component in many industries because of its robust design, efficient performance, and reliability. It is widely used in a variety of automotive and telecommunications applications and provides manufacturers with a reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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