NVTFS4C13NTAG

Vgs(th) (Max) @ Id:	2.1V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3W (Ta), 26W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	770pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15.2nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Recently, with continued research and development, the new N-channel metal-oxide-semiconductor field effect transistor (NMOSFET) technology known as NVTFS4C13NTAG has been developed. This technology has been applied in a number of different fields and has proven to be more efficient and reliable than other technologies. This article will discuss the application field and working principle of NVTFS4C13NTAG.NVTFS4C13NTAG is a single transistor device that can be used in applications such as switching and amplifying signals. This type of device is often used as an electronic switch, and can be found in remote control systems, audio amplifiers, and other electronic devices. The main advantage of this type of device is its low power consumption, which makes it ideal for applications where power is at a premium.In terms of its working principle, NVTFS4C13NTAG is a type of MOSFET-based device and is similar to other types of single-transistor FETs. In terms of its structure, it consists of an insulated gate electrode, a drain and a source electrode, and an impurity region known as an N-substrate. In addition to these elements, it also has an additional layer of an insulating dielectric material, which is typically quartz.When it comes to the operating principles of NVTFS4C13NTAG, a voltage is applied to the gate electrode to forward-bias the device. This results in an electric field created through the insulation dielectric material, which causes a change in the conductivity of the semiconductor material. This change allows current to flow through the transistor, enabling it to amplify or switch a signal.In terms of its applications, NVTFS4C13NTAG is mostly used for low-power switching, analog signal amplification, and power supplies. It is also used in the telecommunications industry, where it is often used in optical switches and modulators. Additionally, this type of transistor has been used in industrial and automotive applications where a reliable, high-performance electronic switch is required.In conclusion, NVTFS4C13NTAG is a single-transistor MOSFET based device that can be used for a variety of applications, such as switching and signal amplification. It is also more efficient and reliable than other technologies, making it an ideal choice for applications where power is at a premium. Additionally, its small size and low power consumption make it suitable for applications such as remote control systems, audio amplifiers, and other electronic devices.

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