NVTFS6H850NWFTAG Allicdata Electronics
Allicdata Part #:

NVTFS6H850NWFTAG-ND

Manufacturer Part#:

NVTFS6H850NWFTAG

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRENCH 8 80V NFET
More Detail: N-Channel 80V 11A (Ta), 68A (Tc) 3.2W (Ta), 107W (...
DataSheet: NVTFS6H850NWFTAG datasheetNVTFS6H850NWFTAG Datasheet/PDF
Quantity: 1000
1500 +: $ 0.36113
Stock 1000Can Ship Immediately
$ 0.4
Specifications
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 40V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101
Vgs(th) (Max) @ Id: 4V @ 70µA
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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TheNVTFS6H850NWFTAG is a type of N-Channel MOSFET (metal–oxide–semiconductor field effect transistors) in a single configuration. It is designed to be used with qualified gate-drive designs and functions as a switching device. This MOSFET has an internal power dissipation of 28W and maximum drain–source breakdown voltage of 50V. It is a fast switching device with a low capacitance body. This device is widely used in various applications such as wireless communication, automotive and industrial electronic equipment, and automotive electronics.

The working principle of the NVTFS6H850NWFTAG is quite simple and involves the flow of electrons. The MOSFET functions as a voltage-controlled switch; when the voltage applied to the gate (G) of the device is high, the majority of electrons flow through the device and a small current flows through the drain (D) to source (S). When the voltage applied to the gate is low, the majority of electrons are blocked from passing through the device and a small current does not flow through D-S. Thus, the NVTFS6H850NWFTAG can act as a voltage switch.

The NVTFS6H850NWFTAG is designed for frequency applications where high switching speed is required. It has an on-resistance of 110µΩ, an off-resistance of 750µΩ, an on-gate capacitance of 4µF, and an off-gate capacitance of 0.1µF. It has an on-state RMS leakage current of 30µA and an off-state leakage current of 30µA. It is rated for a wide range of operating temperatures from -55°C to +175°C. It also has a built-in protection against overvoltage and electrostatic discharge (ESD).

TheNVTFS6H850NWFTAG is widely used in switch-mode power supplies, relays, and automotive applications. In relays, the MOSFET is often used as a solid-state switch, allowing for very fast switching speeds for switching in and out different voltage levels. This can be used to control the power flow in a circuit. In automotive applications, the MOSFET is often used as a switching device to control the power flow to different components, such as lights and motors. It is also used in high-frequency circuits and switches due to its low capacitance and low on-resistance.

The NVTFS6H850NWFTAG is a fast switching type of MOSFET that can handle large current loads and dissipate high power, while still maintaining a high degree of accuracy and efficiency. Its small size and low capacitance body make it ideal for applications where fast switching times are needed. It is also designed to be efficient, reliable, and easy to use. The built-in protection circuits also help to provide added reliability and protection against overvoltage and ESD.

The specific data is subject to PDF, and the above content is for reference

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