Allicdata Part #: | NVTFS6H850NWFTAG-ND |
Manufacturer Part#: |
NVTFS6H850NWFTAG |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRENCH 8 80V NFET |
More Detail: | N-Channel 80V 11A (Ta), 68A (Tc) 3.2W (Ta), 107W (... |
DataSheet: | NVTFS6H850NWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.36113 |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1140pF @ 40V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 4V @ 70µA |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 68A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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TheNVTFS6H850NWFTAG is a type of N-Channel MOSFET (metal–oxide–semiconductor field effect transistors) in a single configuration. It is designed to be used with qualified gate-drive designs and functions as a switching device. This MOSFET has an internal power dissipation of 28W and maximum drain–source breakdown voltage of 50V. It is a fast switching device with a low capacitance body. This device is widely used in various applications such as wireless communication, automotive and industrial electronic equipment, and automotive electronics.
The working principle of the NVTFS6H850NWFTAG is quite simple and involves the flow of electrons. The MOSFET functions as a voltage-controlled switch; when the voltage applied to the gate (G) of the device is high, the majority of electrons flow through the device and a small current flows through the drain (D) to source (S). When the voltage applied to the gate is low, the majority of electrons are blocked from passing through the device and a small current does not flow through D-S. Thus, the NVTFS6H850NWFTAG can act as a voltage switch.
The NVTFS6H850NWFTAG is designed for frequency applications where high switching speed is required. It has an on-resistance of 110µΩ, an off-resistance of 750µΩ, an on-gate capacitance of 4µF, and an off-gate capacitance of 0.1µF. It has an on-state RMS leakage current of 30µA and an off-state leakage current of 30µA. It is rated for a wide range of operating temperatures from -55°C to +175°C. It also has a built-in protection against overvoltage and electrostatic discharge (ESD).
TheNVTFS6H850NWFTAG is widely used in switch-mode power supplies, relays, and automotive applications. In relays, the MOSFET is often used as a solid-state switch, allowing for very fast switching speeds for switching in and out different voltage levels. This can be used to control the power flow in a circuit. In automotive applications, the MOSFET is often used as a switching device to control the power flow to different components, such as lights and motors. It is also used in high-frequency circuits and switches due to its low capacitance and low on-resistance.
The NVTFS6H850NWFTAG is a fast switching type of MOSFET that can handle large current loads and dissipate high power, while still maintaining a high degree of accuracy and efficiency. Its small size and low capacitance body make it ideal for applications where fast switching times are needed. It is also designed to be efficient, reliable, and easy to use. The built-in protection circuits also help to provide added reliability and protection against overvoltage and ESD.
The specific data is subject to PDF, and the above content is for reference
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