NVTFS5826NLTAG Discrete Semiconductor Products

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NVTFS5826NLTAG is an advanced product designed for use in a wide range of power management applications. It stands for N-Channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). It is the latest product released by the company and is a single package field effect transistor (FET).

The NVTFS5826NLTAG offers a high level of flexibility and performance. It is suited for applications where low on-resistance, low gate charge, low input capacitance and high current carrying capability are needed. It is also suitable for applications where a high switching frequency is required. The device has a low on-resistance rating of 240 milli-ohms and is rated to handle currents up to 120A.

The NVTFS5826NLTAG has a wide range of applications, from battery pack and power supply, ESD protection, RF amplifiers, and motor control to automotive, consumer electronics, military, and power management. It is ideal for switching applications that require low on-resistance, low gate charge, and low input capacitance. It is also suitable for high current carrying and high frequency circuits.

The working principle of the NVTFS5826NLTAG is based on the conduction of electrical current through the junction of a semiconductor material between two gates. The gate voltage is controlled and is used to determine the resistance of the device. When the applied voltage across the gates increases, the resistance of the device increases and vice versa. The device is composed of an N-Channel and a P-Channel with an additional control gate around each channel. The control gate voltage is used to control the device resistance, thus allowing the device to be used for switching, amplifying, and voltage regulation.

In conclusion, the NVTFS5826NLTAG is a single package field effect transistor designed to offer high performance in a variety of power management applications. Its high on-resistance rating, low capacitance, and high current carrying capability make it an ideal choice for many different applications. Its working principle is based on the conduction of electrical current through the junction of a semiconductor material between two gates and allows for high frequency circuits as well as voltage regulation.

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