Allicdata Part #: | NVTFS5826NLTWGOSTR-ND |
Manufacturer Part#: |
NVTFS5826NLTWG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A 8WDFN |
More Detail: | N-Channel 60V 7.6A (Ta) 3.2W (Ta), 22W (Tc) Surfac... |
DataSheet: | NVTFS5826NLTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.20540 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 22W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVTFS5826NLTWG is an advanced level MOSFET device, a type of transistor. MOSFETs are a type of field-effect transistor, meaning they are able to control the voltage and current flow by using an electric field. The NVTFS5826NLTWG is a single, low-voltage type of MOSFET and is used mainly in applications where a high level of continuous performance power is required. The device also boasts a wide temperature range ability for reliable performance in a wide range of different climates.
This device is capable of supplying extremely low-on resistance and low-voltage operation. The NVTFS5826NLTWG can be used in a variety of applications such as power management, and power switching. In power management applications, it can be used to regulate the amount of current delivered to the device, and to provide a surge of power for short periods of time for peak demand. In power switching applications, the device is used to turn electrical devices on and off by controlling the amount of current passing through the system.
The device has several features which make it ideal for these types of applications. Firstly, the device is capable of handling up to 38V in high speed switching and low loss applications. It also has a wide operating temperature range of between -40°C and 125°C. Secondly, the device has low on-resistance values of between 1.5 mOhm and 2.5 mOhm which helps to reduce the power losses in the circuits. Finally, the device is rated to be tolerant to transient voltage levels of +/-15V.
The NVTFS5826NLTWG\'s basic working principle is best explained by considering how it works in power management applications. Here, the MOSFET acts like a gate which can be opened and closed as required to regulate the amount of current which can pass through the device. In power switcher applications, the MOSFET will be closed until a predetermined level of voltage is reached and then opened to switch the device on or off. The device is also capable of responding very quickly to changes in the level of current passing through it and can switch in a fraction of a second.
The NVTFS5826NLTWG is a highly versatile MOSFET device which is suitable for a wide range of applications. It features low-on resistance and a wide operating temperature range, making it perfect for power management or power switching applications. It is also highly responsive to changes in voltage levels due to its transient voltage tolerance, making it just as suitable for switching applications as for power management. All of these features make the NVTFS5826NLTWG an ideal choice for applications where high performance and reliability are required.
The specific data is subject to PDF, and the above content is for reference
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