NVTFS5C680NLTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5C680NLTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5C680NLTAG |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 7.82A 20A 8WDFN |
More Detail: | N-Channel 60V 7.82A (Ta), 20A (Tc) 3W (Ta), 20W (T... |
DataSheet: | NVTFS5C680NLTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.17526 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 327pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 26.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.82A (Ta), 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MOSFETs - Single, NVTFS5C680NLTAG application field and working principle.
A Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is a core component in most electronics design and development. MOSFETs - Single is one type of MOSFETs, they’re also referred to as high-voltage power MOSFETs and are especially designed for medium to high voltage applications. NVTFS5C680NLTAG is one of the MOSFETs - Single products, which offers high performance and enhanced features, making it one of the most widely used devices in many industries.
NVTFS5C680NLTAG is a 275V N-channel enhancement mode power MOSFET featuring high voltage capability and low on-resistance. It is designed to improve power efficiency and comes with an integrated Power Control Unit (PCU) for improved thermal performance and easier design. It also comes with an optimized gate-driver circuit that reduces power consumption and minimizes energy losses. This MOSFET can be widely used in many power switching operation applications, such as for power supplies, dc-dc converters, motor drives, lighting, audio, and industrial and general-purpose circuit applications.
The source ofNVTFS5C680NLTAG is a layer of the N-type material composed of electrons, and the gate is an insulated gate. The gate is a barrier and gate electrode with electrical insulation between the channel and gate, so no current flows between gate and channel under normal conditions. When a voltage is applied to the gate to form an electric field, the electric field passes through the insulating layer and depends on the applied voltage and the physical properties of the insulating layer, which will cause the electrons of the semiconductor material to migrate, thereby controlling the current.
In addition, they will have a linear transfer function between the voltage applied to the gate and the drain current, and the current flow can reach an ideal saturation state when the gate voltage is further increased. The driver current for the gate ofNVTFS5C680NLTAG can be conveniently provided, and the drain current can be accurately regulated by the gate voltage, so that it can be used as an electrically controlled switch. By controlling the applied voltage, the current flow between the source and the drain is turned on and off. This makes MOSFETs a popular choice for modern electronics.
NVTFS5C680NLTAG has an integrated high-voltage protection circuitry so it is highly reliable, reducing complexity and cost. It also has a low input capacitance that makes it ideal for power converters. The device also features a low on-state resistance and low off-state leakage current, making it highly efficient. Furthermore, it has wide bandwidth and enables fast switching times so it is perfect for switching applications.
The high-performance features ofNVTFS5C680NLTAG makes it one of the most widely used MOSFETs - Single components in many industries, such as power electronics, communication, automotive and general-purpose circuits. In addition, its reliable performance, low on-resistance, high voltage capability and wide bandwidth make it an ideal choice for many power switching operations.
The specific data is subject to PDF, and the above content is for reference
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