Allicdata Part #: | NVTFS5824NLTAG-ND |
Manufacturer Part#: |
NVTFS5824NLTAG |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A U8FL |
More Detail: | N-Channel 60V 3.2W (Ta), 57W (Tc) Surface Mount 8... |
DataSheet: | NVTFS5824NLTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.30429 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVTFS5824NLTAG is an N-channel enhancement-mode vertical DMOSFET (V-DMOS) that has been specially designed for use in power applications. It is a high-performance discrete FET (Field Effect Transistor) manufactured using Non-Punch Through (NPT) technology. It is a monolithically integrated MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is suitable for use in a wide range of applications such as DC/DC converters, switching power supplies and power amplifiers for audio and video systems. The NVTFS5824NLTAG utilizes well-proven N-channel vertical DMOS FET technology that is optimized for achieving low on-resistance and high current handling capability. It offers a very high level of performance and reliable switching characteristics under a wide array of operating conditions.
The NVTFS5824NLTAG is designed to be used in power circuits and provides excellent static efficiency with maximum drain-source current and on-resistance of 8A and 0.016Ω, respectively. The device is suitable for very high voltage applications, up to 500V. It is capable of handling a high level of power with its very high peak drain current of 40A. The on-resistance of the device is very low, with a value of 0.02Ω, which allows it to provide high efficiency at higher switching frequencies. The device also has an extremely low input/output capacitance of just 0.5pF, meaning that it is less likely to be affected by switching transients.
In order to attain its excellent switching characteristics and high performance, the NVTFS5824NLTAG is constructed from an optimized vertical DMOS die architecture, which was designed to deliver high speed and reliable switching performance. The device uses N-channel, enhancement-mode MOSFET technology which means that the current-carrying channel is formed by applying voltage to the gate. This means that a positive voltage needs to be applied to the gate to turn on the device and a negative voltage needs to be applied to the gate to turn off the device. As a result, the device is extremely reliable and efficient, allowing it to be used in power switching applications such as DC/DC converters and switching power supplies.
The NVTFS5824NLTAG is a high-performance FET that is designed to replace multiple discrete transistors and diodes in power switch solutions. It is able to operate at very high switching frequencies (up to 500kHz in some applications) and is capable of providing very low on-resistance and high current handling capabilities. The device is extremely reliable and efficient, making it suitable for use in a wide range of applications, from audio and video amplifiers to DC/DC converters and switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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