Allicdata Part #: | NVTFS5820NLWFTWG-ND |
Manufacturer Part#: |
NVTFS5820NLWFTWG |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 37A U8FL |
More Detail: | N-Channel 60V 11A (Ta) 3.2W (Ta), 21W (Tc) Surface... |
DataSheet: | NVTFS5820NLWFTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.36385 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1462pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 8.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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NVTFS5820NLWFTWG Application Field and Working Principle
The NVTFS5820NLWFTWG is a high-voltage, high-performance n-channel Power MOSFET that is a part of the N-Series of transistors from ON Semiconductor. This device is designed specifically for automotive infotainment applications, where accepted levels of heat are high. This device is designed with an advanced trench silicon nitride structure and is capable of operating at voltages of up to 950V and currents of up to 3.2A.
Application Fields
The NVTFS5820NLWFTWG is designed for automotive infotainment applications. It can be used in high-current and high-voltage applications, such as DC-DC converters, motor control, power supplies, hot-swap protection, transient voltage suppression and overvoltage/undervoltage protection. Additionally, it is often used in automotive door lock and window lift solenoid control circuits. The device is also well-suited for power supply design, power management and point-of-load power supply designs.
Working Principle
The NVTFS5820NLWFTWG is a n-channel MOSFET in which the channel is created by a negatively-charged electrons and the source is connected to the gate. The device has a high breakdown voltage of 950V and a low ON-state resistance, which allows it to carry high currents with minimal power dissipation. When a positive voltage is applied to the gate, a depletion region is created in the channel between the source and drain. This results in a current flowing between the source and drain. The amount of current flowing through the channel is determined by the magnitude of the gate voltage.
Advantages
The NVTFS5820NLWFTWG has a number of advantages compared to other types of transistors. These include:
- Low on-state resistance for high operating currents
- High breakdown voltage for reliable operation in applications with high voltages
- Excellent thermal management for high-temperature environments
- High-power density for increased efficiency
Conclusion
The NVTFS5820NLWFTWG is an n-channel Power MOSFET designed specifically for automotive infotainment applications, where accepted levels of heat are high. It is capable of operating at voltages of up to 950V and currents of up to 3.2A. This device is well-suited for power supply design, power management and point-of-load power supply designs. The NVTFS5820NLWFTWG has a number of advantages compared to other types of transistors, including low on-state resistance, high breakdown voltage and excellent thermal management.
The specific data is subject to PDF, and the above content is for reference
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