
NVTFS4C08NTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS4C08NTAGOSTR-ND |
Manufacturer Part#: |
NVTFS4C08NTAG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 55A U8FL |
More Detail: | N-Channel 30V 17A (Ta) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1500 |
1500 +: | $ 0.20958 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1113pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS4C08NTAG is an advanced single voltage-controlled field-effect transistor (FET) designed for a wide range of applications. It is also one of the most widely used FETs for modern designs due to its superior features, such as low power consumption, low on-resistance, and high breakdown voltage.
The NVTFS4C08NTAG is a single N-Channel FET, which means it only has one terminal that the signal must be sent through to the channel. Depending on the design of the circuit, this signal can come from either a digital or an analog source. This FET is also capable of operating as either a depletion mode device, meaning the channel is “on” all the time, or an enhancement mode device, meaning the channel is only “on” when the terminal is connected to the appropriate voltage.
The NVTFS4C08NTAG is designed to operate with a maximum drain-source voltage of 200V, and a maximum gate-source rating of ±20V. This gives it a wide range of application possibilities, as it is suitable for almost any voltage range typical of most applications. It also features a breakdown voltage of as high as 400V, meaning it is able to withstand higher voltages without being damaged. The maximum drain current of 80mA also makes it suitable for a wide range of current-driven applications.
The working principle of this FET is simple. When a voltage is applied to the gate, it creates an electric Field that then divides the drain-source voltage into two separate parts. The part of the voltage that is controlled by the gate is called the “gate control voltage” and is equal to the drain-source voltage ( minus the gate-source voltage ). The other part of the voltage is the “body voltage”, which is equal to the gate-source voltage. This body voltage is what determines whether the channel is on or off.
When the gate control voltage is greater than the body voltage, the channel is “on” and current will flow between the drain and the source. When the gate control voltage is lower than the body voltage, the channel is “off” and no current will flow between the drain and the source. The amount of current that flows when the channel is “on” is determined by the relationship between the drain-source voltage and the gate control voltage.
The NVTFS4C08NTAG is an excellent choice for a wide variety of applications, including circuits that require high voltage and current control, such as audio and video equipment. Its low power consumption and high breakdown voltage make it well suited for any circuit design. Additionally, its low on-resistance means it is capable of handling a large amount of current with minimal loss of power.
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