NVTFS5124PLWFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5124PLWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5124PLWFTAG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 8A U8FL |
More Detail: | P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface ... |
DataSheet: | NVTFS5124PLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.19289 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 18W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS5124PLWFTAG transistors are part of the single-transistor family, which is a type of field-effect transistor (FET). FETs are solid-state devices designed to control the movement of electrical current, which means they can be used to amplify, oscillate, or switch electrical signals. The NVTFS5124PLWFTAG transistor is specifically a N-channel enhancement-mode power metal-oxide-semiconductor field-effect transistor (MOSFET), which is known for its low power dissipation and "dual gate" design. As such, it is commonly used to switch high current or voltage applications in industries such as automotive, medical, aerospace, and military.
The NVTFS5124PLWFTAG is an enhancement-mode Power MOSFET transistor, meaning it has a high power switching capability and is designed to operate in harsh environmental conditions. The transistor has an integral body diode, which provides circuit protection from switching transients. It also has a built-in ESD protection circuit, which provides protection against electrostatic discharge.
The working principle of the NVTFS5124PLWFTAG is fairly straightforward. When voltage is applied across the source and drain terminals, a depletion region is formed in the transistor\'s semiconductor material. This causes a depletion layer of electrons, which results in the transistor being OFF (or "open") when no voltage is applied. When a voltage is applied across the gates, the depletion region is reduced and the transistor turns ON (or "closed"), allowing current to flow through the transistor. This process can be reversed by reducing the applied voltage, turning the transistor OFF again.
NVTFS5124PLWFTAG transistors are mainly used as switches in high-current or high-voltage circuits. They are commonly used in the automotive industry, where they are used to switch devices such as electric or hybrid electric vehicles, power windows and locks, electric cooling fans, and electric fuel pumps. In the medical industry, they are commonly used in medical diagnostic equipment, imaging systems, and patient monitoring systems. In the aerospace industry, they are found in systems such as Inertial Navigation Systems, Flight Instrumentation Systems, and Avionics. Finally, in the military, they are used to switch radars, radios, and other military equipment.
The NVTFS5124PLWFTAG is a reliable, high-performance transistor with a wide range of applications. Its high current and voltage switching capabilities, integrated body diode, and ESD protection make it an ideal choice for many industries. It also has a low power dissipation and is capable of operating in extreme temperatures and harsh environments. All in all, the NVTFS5124PLWFTAG is an ideal transistor for a variety of applications in automotive, medical, aerospace, and military industries.
The specific data is subject to PDF, and the above content is for reference
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