Allicdata Part #: | NVTFS5811NLWFTAG-ND |
Manufacturer Part#: |
NVTFS5811NLWFTAG |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 40A U8FL |
More Detail: | N-Channel 40V 16A (Ta) 3.2W (Ta), 21W (Tc) Surface... |
DataSheet: | NVTFS5811NLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.41036 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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NVTFS5811NLWFTAG is a single N-channel power Field Effect Transistor (FET) that can be used in a variety of applications. It is manufactured using high-quality, high-reliability vertical structure technology, making it ideal for use in consumer, industrial, and automotive systems, as well as other applications requiring high levels of reliability and performance. This device can be used in a variety of applications, including motor control, switching, and power management.
The NVTFS5811NLWFTAG is a vertical power FET with a single N-channel junction field-effect structure integrated into a TO-263-2L package. The high voltage rating and low on-resistance make this device ideal for use in applications such as motor control, switching and power management. The device features an under voltage lockout (UVLO) that prevents its operation until the gate voltage surpasses a pre-determined level thereby protecting the input power supply from current overload and providing an auto-restart feature.
The working principle of the NVTFS5811NLWFTAG is based on the field-effect principle. A voltage applied to the gate of the FET changes the conductivity of the FET, allowing current to flow between the drain and source. The gate voltage acts as a control signal for the current flow, where a higher voltage results in a higher current flow. As the gate voltage increases, the on-state resistance of the FET decrease. The maximum current rating of this device is 4 A.
The NVTFS5811NLWFTAG is designed to deliver high performance and reliability in various applications. It offers a drain-source breakdown voltage of 40 V and an on-resistance of only 0.080 ohms when the gate voltage is at 10 V. The device also features high electrostatic discharge (ESD) protection, a high peak aqua signal, and short-circuit protection. In addition, the device is RoHS compliant and has excellent surge withstand capability. These features make the NVTFS5811NLWFTAG the transistor of choice for reliable performance in a number of applications.
The NVTFS5811NLWFTAG is a very versatile device, and can be used in a variety of applications. It is ideal for consumer, industrial and automotive systems that require high levels of reliability and performance. It can also be used for motor control, switching, and power management, as well as a variety of other applications. With its high voltage rating, low on-resistance, ESD protection, and surge withstand capability, the NVTFS5811NLWFTAG is the ideal choice for reliable performance in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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