NVTFS5C670NLTAG Allicdata Electronics

NVTFS5C670NLTAG Discrete Semiconductor Products

Allicdata Part #:

NVTFS5C670NLTAGOSTR-ND

Manufacturer Part#:

NVTFS5C670NLTAG

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 16A 70A 8WDFN
More Detail: N-Channel 60V 16A (Ta), 70A (Tc) 3.2W (Ta), 63W (T...
DataSheet: NVTFS5C670NLTAG datasheetNVTFS5C670NLTAG Datasheet/PDF
Quantity: 1000
1 +: $ 0.30000
10 +: $ 0.29100
100 +: $ 0.28500
1000 +: $ 0.27900
10000 +: $ 0.27000
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NVTFS5C670NLTAG Application Field and Working Principle

The NVTFS5C670NLTAG is a single Field Effect Transistor (FET) available as Normal Level (NL) Tag and designed for use in general purpose switching and amplifier applications. In particular, this device offers superior performance in amplifier applications in terms of breakdown voltage and low gate charge. Moreover, it is suitable for Fast switching in amplifier circuits.

A Field Effect Transistor (FET) is a type of transistor where the action of an electric field determines the resistance of the channel between two terminals. This provides it with the unique characteristics of being able to be used as a switch or as an amplifier. It is constructed of two p-type semiconductor layers, with a gate layer in between. The two p-type layers form the \'drain\' and \'source\' of the device and the gate layer forms the \'gate\'. When a voltage is applied to the gate, an electric field is created that attracts or repels the charge carriers in the channel, resulting in the channel being turned on or off.

The NVTFS5C670NLTAG is designed for use in general purpose switching and amplifier applications. It offers superior performance in terms of its breakdown voltage, which is up to 600 Volts for its drain-to-source voltage. Moreover, it also has a low gate charge, which reduces the time required for switching. This makes it suitable for use in fast switching applications. It also has a low drain-to-source on-resistance of 4.6 ohms, making this device ideal for applications where current can be switched quickly.

The device also features a wide operating temperature range of -55°C to +175°C, making it suitable for use in a wide range of applications. The device is also ESD-protected, making it less susceptible to failure due to ESD events. Moreover, the device also features a low input capacitance of 55.7pF and a low output capacitance of 16.1pF.

In addition, the NVTFS5C670NLTAG is RoHS compliant, making it suitable for use in green electronics applications. It is also available in a surface mount package, making it ideal for use in modern electronics designs.

Overall, the NVTFS5C670NLTAG is an ideal device for use in a variety of switch and amplifier applications. Its superior breakdown voltage and low gate charge make it suitable for fast switching applications. Its wide operating temperature range and ESD protection make it suitable for use in a wide range of applications. And its low input and output capacitance makes it suitable for tight space designs.

The specific data is subject to PDF, and the above content is for reference

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