NVTFS5C680NLWFTAG Allicdata Electronics
Allicdata Part #:

NVTFS5C680NLWFTAG-ND

Manufacturer Part#:

NVTFS5C680NLWFTAG

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 7.82A 20A 8WDFN
More Detail: N-Channel 60V 7.82A (Ta), 20A (Tc) 3W (Ta), 20W (T...
DataSheet: NVTFS5C680NLWFTAG datasheetNVTFS5C680NLWFTAG Datasheet/PDF
Quantity: 1000
1500 +: $ 0.22659
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 327pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVTFS5C680NLWFTAG transistor is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single MOSFET, meaning it contains only one active channel in a single channel structure. This makes it a very cost-effective and efficient choice for use in several applications.

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor that is based on a semiconductor substrate and metal-oxide semiconductor (MOS) technology. This type of transistor differs from the traditional transistor in that it does not involve a current flow between the collector and the emitter. Instead, the transistor works on the basis of a voltage applied to the gate, which then controls the flow of electrons through the gate and over the surface of the semiconductor substrate, to create a current.

The NVTFS5C680NLWFTAG transistor is a special type of MOSFET which has reduced gate length and a large sigma-shaped voltage characteristic. This gives it excellent power performance and a wide operating range. The low gate resistance also allows for excellent linear performance, allowing for a wide range of applications.

This single-channel MOSFET is also a cost-effective and efficient choice for many applications as it is easy to mount and relatively low in terms of its total cost structure. Additionally, its long lifetime means it can be used in long-term applications without having to worry about failure or degradation. Its low ratiometric threshold voltage also makes it suitable for many applications where low input voltages are needed.

The NVTFS5C680NLWFTAG transistor has several different uses and applications. Its strong linear and power capabilities make it suitable for use in high efficiency, low voltage power conversion applications such as voltage regulators and DC power supplies. It is also suitable for high-frequency switching applications such as in radio frequency (RF) and digital signal processing (DSP) circuits. As it does not require a current flow between the collector and the emitter, it is also suitable for applications involving large current gate drives.

The working principle of the NVTFS5C680NLWFTAG transistor is based on the ability of the voltage applied to the gate to control the flow of electrons through the gate, which creates a current. This current is then used to switch circuits on and off, allowing for a wide range of applications. Additionally, its low ratiometric threshold voltage allows for very low input voltages to be used to switch circuits on or off. This makes it useful in applications involving sensitive electronic components, as well as in applications where extremely low power consumption is desired.

In short, the NVTFS5C680NLWFTAG transistor is a type of single-channel MOSFET which is suitable for numerous applications due to its low ratiometric threshold voltage, low gate resistance, and excellent linear and power performance. Its cost-effectiveness, ease of mounting, and long lifetime also make it an attractive choice for many applications. Its low voltage operation and its ability to switch circuits on and off make it well-suited for many applications, including in radio frequency, digital signal processing, and high efficiency power conversion circuits.

The specific data is subject to PDF, and the above content is for reference

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