NVTFS4C06NTWG Allicdata Electronics
Allicdata Part #:

NVTFS4C06NTWG-ND

Manufacturer Part#:

NVTFS4C06NTWG

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 71A U8FL
More Detail: N-Channel 30V 21A (Ta) 3.1W (Ta), 37W (Tc) Surface...
DataSheet: NVTFS4C06NTWG datasheetNVTFS4C06NTWG Datasheet/PDF
Quantity: 1000
5000 +: $ 0.21440
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors - FETs, MOSFETs - Single

NVTFS4C06NTWG is a MOSFET type of transistor, single-die device which primarily functions as an amplifier. This type of device is used as a switch to amplify the signals between two circuits. It also functions as a signal processor and as a voltage regulator.MOSFETs are comprised of an insulated gate and a channel of semiconductor material that connects the source and drain regions. The device acts as a switch when a voltage is applied to the gate. The channel conducts when the voltage between the gate and source reaches a certain threshold, otherwise it does not. The current flow between the drain and the source determine the characteristics of the device.MOSFETs have become increasingly popular in a variety of applications such as power electronics and digital logic circuits. The NVTFS4C06NTWG is one of many types of MOSFETs available on the market today and is typically used in mobile phone, tablet and computer circuits. It is well-suited for digital logic circuits and power switching applications because of its low gate threshold voltage and high current performance.The NVTFS4C06NTWG has a very low gate threshold voltage of 0.9V and can also be driven by a complex load network. This allows the device to be used in systems where the outputs are connected to multiple loads. It also has a very low on-resistance of 18 milli-ohms, making it suitable for circuits with high frequency switching requirements.In power switching applications, the NVTFS4C06NTWG is ideal for applications such as motor drive circuits and DC/DC converters. It can handle currents up to 5A, so it is suitable for most power applications. Additionally, the device is also able to provide isolation between the gate and the source, which is important in applications that require galvanic isolation such as industrial automation systems.The NVTFS4C06NTWG is also well-suited for digital logic circuits such as logic buffers, memory cell circuits, and digital logic switches. The device has a low static power consumption, so its power consumption is much lower than other types of logic switches. Additionally, the device has a high switching speed of 25ns which makes it well-suited for fast applications.Overall, the NVTFS4C06NTWG is one of many types of transistors and single-die MOSFETs that are available on the market today. Its low gate threshold voltage and high current performance make it well-suited for power switching and digital logic applications. Additionally, its low static power consumption and high switching speed make it well-suited for many applications.

The specific data is subject to PDF, and the above content is for reference

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