Allicdata Part #: | NVTFS5824NLTWG-ND |
Manufacturer Part#: |
NVTFS5824NLTWG |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A U8FL |
More Detail: | N-Channel 60V 3.2W (Ta), 57W (Tc) Surface Mount 8... |
DataSheet: | NVTFS5824NLTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.26980 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVTFS5824NLTWG is a single P-channel, depletion mode field effect transistor (FET) that is widely used in several electronic applications. The FET is a type of transistor that is used to amplify or switch electronic signals and electrical power. It is made up of an electrically insulated gate, source, and drain, connected by a semiconductor material. When the voltage on the gate of the FET is increased, it allows the flow of current through it. This is done by the promotion of electrons from the source to the drain.
The NVTFS5824NLTWG is designed for applications where low on-resistance and good avalanche characteristics are required. It has a maximum drain current of 3 A and a breakdown voltage of 20 V. This FET is most commonly used as an input or output device in high-power audio amplifiers, DC-DC converters, Current regulators, and motor drive circuits.
The NVTFS5824NLTWG is a standard, low-power FET. It has a low input capacitance and low gate charge, which allows it to operate at high frequencies with minimal noise or distortion. It also features a low-on-resistance (RDS) that helps to reduce power consumption. The device also features an excellent thermal stability and fast switching features, making it ideal for high frequency applications.
The working principle of the NVTFS5824NLTWG is based on the concept of "subthreshold conduction". When a sufficient negative voltage (VGS) is applied to the gate, it allows for the flow of current through the FET channel between the source and the drain. The amount of current that can be drawn from the drain is determined by the voltage VDS, and is controlled by the voltage VGS. This makes it easy to control and regulate the current draw from the FET.
The NVTFS5824NLTWG is a versatile and reliable FET for many applications. It has good thermal and electrical characteristics and is designed for low power consumption. It is important to note that it is not suitable for all applications, and should be used according to the manufacturer’s specifications.
The specific data is subject to PDF, and the above content is for reference
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