NVTFS5C454NLWFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5C454NLWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5C454NLWFTAG |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 40V 85A 8WDFN |
More Detail: | N-Channel 40V 85A (Tc) 55W (Tc) Surface Mount 8-WD... |
DataSheet: | NVTFS5C454NLWFTAG Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.26627 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVTFS5C454NLWFTAG is a single channel N-channel enhancement-mode Field-Effect Transistor (FET) in a TO-251AA package, designed for high-speed switching applications. It is a versatile, easy-to-use FET that offers low on-resistance and fast switching speed when used in the appropriate circuit. The device is also highly reliable and is suitable for a wide range of industrial and consumer-oriented applications, including automotive, power supply, consumer electronics, and telecommunications.
The NVTFS5C454NLWFTAG is characterized by its low drain-to-source on-resistance and its excellent noise immunity, both of which give it an advantage over other similar devices. It features a low operating temperature and a lower current drain than its predecessors. In addition, it offers an integrated protection feature which prevents electrostatic discharge (ESD) damage.
The working principle of the NVTFS5C454NLWFTAG is based on the FET\'s "gate edge effect". In this effect, the conductance of the device is determined by the electric field generated by the voltage applied to its gate. This field creates an electric barrier in the channel between the source and the drain, thereby regulating the free flow of current through the device. The greater the gate voltage applied, the larger the electric field, thus the larger the conductance. With the appropriate gate voltage, the device operates as an on/off switch, opening and closing the current path depending on the voltage state.
This means that the frequency of operation and the power handling capabilities of the NVTFS5C454NLWFTAG depend on the gate voltage. As such, careful selection of the voltage range is necessary in order to match the FET\'s performance to the application at hand. This device is well suited for high-speed switching applications, as the low on-resistance and the fast switching speed offered make it highly efficient for such applications.
The NVTFS5C454NLWFTAG is suitable for a wide range of industrial and consumer applications, including automotive electronics, power supply, consumer electronics, and telecommunications. It is highly reliable, as its low operating temperature and low current drain ensure that it can perform reliably even under extreme conditions. In particular, its integrated protection feature gives it a clear advantage over other similar devices, as it prevents ESD damage from occurring.
In summary, the NVTFS5C454NLWFTAG is a reliable, highly efficient FET suitable for a wide range of applications. Its low on-resistance and fast switching speed make it well suited for high-speed switching applications, while its integrated protection feature prevents ESD damage. As such, the device is an ideal choice for a wide range of industrial and consumer-oriented applications.
The specific data is subject to PDF, and the above content is for reference
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