NVTFS6H850NTAG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 70µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11.4nF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVTFS6H850NTAG application field and working principleNVTFS6H850NTAG is a high performance enhancement-mode vertical N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with low on-resistance, fast switching speed, and low gate drive requirement. This MOSFET is suitable for low voltage, low frequency switching applications and is designed to minimize on-state resistance while providing superior switching performance compared to traditional discrete MOSFETs for the same current rating.The NVTFS6H850NTAG is a high power MOSFET that offers superior power handling performance to other standard MOSFETs. The device is designed for high frequency digital switching and rectification applications in a small package. As a digital switching element, it helps to reduce the amount of energy needed to accomplish the same objective, resulting in lower power consumption.The NVTFS6H850NTAG is a vertical enhancement-mode N-channel MOSFET with low on-resistance and fast switching speed. This device features low gate drive requirements, giving designers the flexibility to select lower cost MOSFETs to meet their power requirements. The high current-handling capability and low input capacitance of this MOSFET also make them ideal for high frequency rectification and switching applications in a variety of high frequency industries, including telecommunications, server and storage, and automotive systems.The NVTFS6H850NTAG is produced using multi-gate oxide technology, which helps to reduce the amount of threshold voltage drift and parasitic off-state leakage current, thus making it more reliable for high current applications. This device utilizes vertical structure instead of traditional horizontal, improving the power dissipation and breakdown voltage ratings.The working principle of the NVTFS6H850NTAG is based on the fact that an electric field can influence the behavior of a material. The electric field is applied to the MOSFET by applying a voltage to its gate terminal, which will then open or close the drain to source channel. When it is turned on, the drain–source path is formed, and current can flow, creating an absolute electrical conductivity between the drain and the source. When the gate voltage is removed, the channel is turned off and the current flow is interrupted.The NVTFS6H850NTAG can be used in a variety of applications such as power supply circuits, power switching, motor control, and embedded systems among others. The device is also used in automotive systems and can be used to improve efficiency and reduce costs. The device is also suitable for high frequency switching and rectification applications in a small package.The NVTFS6H850NTAG can be used in a variety of applications where fast switching and low on-resistance MOSFETs are needed, such as DC-DC converters and power distribution systems. The device is also suitable for high frequency applications in medical, automotive and telecommunications industries.In conclusion, the NVTFS6H850NTAG is a high performance Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that offers superior power handling performance with low on-resistance and fast switching speed. The device is suitable for low voltage and low frequency switching applications as well as high frequency digital switching and rectification applications. The device is designed for use as a digital switching element to reduce power consumption and is suitable for DC-DC converters, power distribution systems and other applications where fast switching and low on-resistance is required.

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