NVTFS5C658NLTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5C658NLTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5C658NLTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 109A 8WDFN |
More Detail: | N-Channel 60V 109A (Tc) 114W (Tc) Surface Mount 8-... |
DataSheet: | NVTFS5C658NLTAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 114W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1935pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 109A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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N-Channel enhancement-mode Field-effect transistors (N-type FETs) are used in a wide range of applications and are the most commonly used transistors in the world. The NVTFS5C658NLTAG is a type of N-Channel enhancement-mode FET which is used in analog and digital switching applications, power regulation and control, and voltage level detection. It is a single transistor and has a few of its own unique features, making it suitable for certain applications. In this article, we will discuss the application field and working principle of the NVTFS5C658NLTAG.
Application Field
The NVTFS5C658NLTAG is used in various applications and can be adapted to different circuit designs. It is often used in voltage regulation, electrostatic protection, ultra-low-noise amplifier circuits, high-side switching devices, differential amplifier circuits, and power switching regulators. It can also be used in MOSFET driver circuits and analog and digital switching applications. Due to its low off-state leakage current, high-frequency operation capability and low input capacitance, the NVTFS5C658NLTAG is also used in power supply surge protection circuits, and can be adapted for use in logic gates and circuits. It is well suited for applications where low noise and stable operation are required.
Working Principle
The NVTFS5C658NLTAG is a type of Field-Effect Transistor (FET) which uses the principle of electrostatic charge to control the flow of current. The transistor consists of a channel between two terminals, called the source and drain. When an electromagnetic voltage is applied to the gate terminal, it controls the flow of current across the channel and thus acts as a switch with its own characteristics. The NVTFS5C658NLTAG has a high on-state resistance, allowing it to function well as a low-noise amplifier. The off-state leakage current is also low, allowing the FET to be well suited for use in analog and digital switching applications.
Conclusion
In conclusion, the NVTFS5C658NLTAG is a type of N-Channel enhancement-mode FET which is used in a wide range of applications. It is well suited for applications where low noise and stable operation are required. It has a high on-state resistance and low off-state leakage current, making it suitable for use in power regulation and control, voltage level detection, and other switching applications. Finally, the working principle of the NVTFS5C658NLTAG is based on the principle of electrostatic charge, whereby an electromagnetic voltage applied to the gate terminal controls the flow of current through the transistor channel.
The specific data is subject to PDF, and the above content is for reference
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