NVTFS5124PLTWG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5124PLTWGOSTR-ND |
Manufacturer Part#: |
NVTFS5124PLTWG |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 8A U8FL |
More Detail: | P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface ... |
DataSheet: | NVTFS5124PLTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.14876 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 18W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS5124PLTWG is a single N-channel, high-voltage field-effect transistor designed for use in a variety of applications including power management, light dimming and motor control. The device is made with a combination of P- and N-channel MOSFET designs, creating an unusually versatile device capable of switching large amounts of power with high efficiency. In this article, we\'ll take a look at the application field and working principles of this powerful semiconductor.
This device was specifically designed for applications where low on-resistance is necessary for high efficiency. Traditionally, P-channel MOSFETs have higher on-resistance than N-channel designs and require higher gate voltage to turn them on; the NVTFS5124PLTWG uses a combination of P- and N-channel MOSFETs to reduce on-resistance and lower gate voltage requirements. The device is also resistant to temperature extremes, making it a good choice for industrial and automotive applications.
The NVTFS5124PLTWG is also designed to reduce energy losses through its uniquely designed package. The device is designed with exposed copper pad thermal areas that allow the device to heat quickly and evenly throughout its entire surface area, increasing its efficiency and heat dissipation. The device is also equipped with side fins, which help to guide the heat away from the transistor and reduce the amount of heat that is transferred to other components.
The device is capable of switching between 8 and 60 volts, with a low on-state resistance that helps to reduce power losses. The device is also able to switch high currents, making it suitable for use in motor control, light dimming and power management applications. The device has a low total gate charge, which helps to reduce switching losses and improves efficiency. Finally, the NVTFS5124PLTWG has a high dV/dt rating, which helps to reduce switching time. This combination of features makes it a powerful and versatile device for high-voltage applications.
The working principle of NVTFS5124PLTWG is based on the same principles as other field-effect transistors. It uses an insulated gate in combination with a P-type or N-type substrate. When a voltage is applied to the gate, it forms an electric field that modulates the conductivity of the substrate, allowing current to flow across it. Depending on the configuration of the transistor, the current flow can be either turned on or off. The device is also able to run at very high speeds, allowing it to switch rapidly between high and low states.
The NVTFS5124PLTWG is a versatile and powerful semiconductor device, capable of switching high-current applications and reducing power losses. Its combination of P- and N-channel MOSFETs, low total gate charge, high dV/dt rating, and exposed copper pad thermal areas make it a great choice for industrial, automotive and other high-voltage applications. It can be used to switch large amounts of power with high efficiency and reduced power losses, making it an ideal solution for power management, light dimming and motor control.
The specific data is subject to PDF, and the above content is for reference
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NVTFS4C08NTAG | ON Semicondu... | 0.22 $ | 1500 | MOSFET N-CH 30V 55A U8FLN... |
NVTFS4C10NWFTAG | ON Semicondu... | 0.25 $ | 1500 | MOSFET N-CH 30V 15.3A U8F... |
NVTFS4823NWFTAG | ON Semicondu... | 0.27 $ | 1500 | MOSFET N-CH 30V 30A U8FLN... |
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NVTFS4C13NWFTWG | ON Semicondu... | 0.2 $ | 1000 | MOSFET N-CH 30V 40A U8FLN... |
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