Allicdata Part #: | NVTFS5C673NLWFTAG-ND |
Manufacturer Part#: |
NVTFS5C673NLWFTAG |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 13A 50A 8WDFN |
More Detail: | N-Channel 60V 13A (Ta), 50A (Tc) 3.1W (Ta), 46W (T... |
DataSheet: | NVTFS5C673NLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.28415 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 9.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS5C673NLWFTAG Application Field and Working Principle
NVTFS5C673NLWFTAG is a high-speed, high-performance transistor field-effect transistor (FET). It has a unique three-dimensional, integrated symmetric structure and the latest semiconductor technology. It can control the current density of the transistor, and thus adjust the switching speed.
Application Field
NVTFS5C673NLWFTAG is widely used in power electronic distribution systems including automotive electronics, power supplies, mobile phone chargers, power inverters, and more. It is also widely used in telecommunication terminals, regulator circuits and semiconductor loading devices. It can also be widely used in modern kinds of control systems such as industrial control, communication control and AC servo control systems.
Working Principle
The way NVTFS5C673NLWFTAG works is through the metal-oxide-semiconductor (MOS) transistor. It comprises of three terminals, namely the source, drain and gate. The drain and source are connected to the power supply, while the gate terminal controls the current flow. When a voltage is applied to the gate terminal, an electric field is created between the gate and the semiconductor substrate. This electric field builds an electric field-induced barrier that controls the current flow between the drain and the source. Therefore, by controlling the voltage applied to the gate terminal, you can control the current flow and the switching speed of the transistor.
NVTFS5C673NLWFTAG transistors are highly efficient and offer enhanced switching performance with increased current levels. They provide high frequency response, especially in the range of 1MHz to 10MHz, due to their high switching speed. Due to their high current density and low on-state resistance, they can reduce power consumption and temperature in the circuit.
Conclusions
NVTFS5C673NLWFTAG is a high-end power field-effect transistor and is highly beneficial in power electronic systems. It is quite efficient and makes use of the latest semiconductor technology to achieve fast switching. It is reliable and adjusts with any voltage levels, providing ideal switching capability in power systems. It has found application in a range of industries, ranging from automotive electronics to telecommunication systems.
The specific data is subject to PDF, and the above content is for reference
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