NVTFS5C453NLWFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5C453NLWFTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5C453NLWFTAG |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 107A 8WDFN |
More Detail: | N-Channel 40V 107A (Tc) 68W (Tc) Surface Mount 8-W... |
DataSheet: | NVTFS5C453NLWFTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.34103 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 107A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTFS5C453NLWFTAG stands for N-Channel Vertical Trench Field-Effect Transistor, and it is a type of field-effect transistor (FET) with an insulated gate, most commonly known as a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a single-source component, meaning it has only one source terminal, and it is most commonly used in power management circuits, switch-mode power supplies, and other applications requiring high-speed switching.
FETs are constructed in a similar manner to a standard transistor, except the gate of the transistor is completely insulated from the source, drain and channels by a dielectric material. This insulation makes them suitable for use in high-frequency and high current applications, as they are unaffected by stray fields or radiation. MOSFETs are the most commonly used type of FET, and they are comprised of three terminals; the source, drain, and gate. The gate is the most important component of the MOSFET, and it acts as a switch to control the flow of electrons between the source and drain terminals.
The NVTFS5C453NLWFTAG is a vertical trench FET, so it features a higher breakdown voltage than other types of FETs, making it suitable for high-voltage switching applications. This type of FET also has lower power loss, which enables it to operate cooler and at higher speeds than standard FETs. The NVTFS5C453NLWFTAG can handle up to 100V and has a drain current rating of 453A, making it ideal for power management circuits and switch-mode power supplies.
The working principle of the NVTFS5C453NLWFTAG is similar to that of other MOSFETs. When a positive voltage is applied to the gate, it creates an electrostatic field that causes a conductive channel to form between the source and drain terminals. This channel allows electrons to flow through it, creating a current between the two terminals. When the voltage to the gate is removed, the electric field collapses, and the channel is blocked, preventing current from flowing.
The NVTFS5C453NLWFTAG is an ideal solution for high-voltage switching applications because of its high breakdown voltage rating and low power loss. It can be used in a variety of circuits, such as power management circuits, switch-mode power supplies, and other applications requiring high-speed switching. Its vertical trench construction makes it more robust and efficient than standard FETs, making it an excellent choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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