Allicdata Part #: | NVTFS5811NLTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5811NLTAG |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 40A 8WDFN |
More Detail: | N-Channel 40V 16A (Ta) 3.2W (Ta), 21W (Tc) Surface... |
DataSheet: | NVTFS5811NLTAG Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.38732 |
Specifications
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Description
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The NVTFS5811NLTAG is a field effect transistor (FET) that is often used in various applications. This type of transistor comprises a single channel enhancement mode nMOSFET that is intended for high power switching applications. It is tailored for use in low voltage applications such as switch mode power supplies, DC/DC converters, chargers, motor drivers and other applications.The NVTFS5811NLTAG is based on the N-channel Enhancement Mode MOSFET (MOSFET) technology and the current through it is controlled by the voltage applied to its gate. This type of MOSFET is usually used for switching applications due to its low capacitance and low gate threshold voltage. It has a maximum continuous drain current of 58A up to 25C.This MOSFET is designed with a special gate structure that provides very low on-resistance and a low gate charge. It also features a dielectric breakdown voltage rating of 60V, making it suitable for low voltage applications. Other features include low thermal resistance, low gate charge and a breakdown voltage rating of 500V.The NVTFS5811NLTAG is widely used for a variety of applications. It can be used as an electronic sensing device in motor driver applications as well as in power management applications such as battery chargers, dc/dc converters, and fuel cells. It can also be used as a switch in power management applications such as power supply design, power saving devices, wireless communication systems, and other applications.The operation of the NVTFS5811NLTAG is based on the ability of the gate to control the flow of current. When the gate voltage is increased, the current in the transistor is increased and as the gate voltage is decreased, the current in the transistor is decreased. This effect is known as the enhancement mode and is essential for the proper performance of the NVTFS5811NLTAG.The working principle of this device is simple; by applying a low voltage to the gate, it is able to control the channel current. By increasing the gate voltage, the current in the transistor is increased and the device is said to be in the “on” state. By decreasing the gate voltage, the device is said to be in the “off” state. The device is switched from “off” to “on” and vice versa by controlling the gate voltage.Overall, the NVTFS5811NLTAG is a versatile and reliable technology for high power switching applications. It has a low capacitance and low gate threshold voltage, making it well suited for low voltage applications. It is often used as an electronic sensing device in motor driver applications as well as in power management applications such as battery chargers, dc/dc converters, and fuel cells. Its dielectric breakdown voltage rating of 60V makes it suitable for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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